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A2SHB - N-Channel MOSFET
3.7A, 20V N N N-Channel Enhancement Mode Field Effect Transistor SMD Features ■20V, 3.7A, RDS(ON)=50mΩ @ VGS=4.5V ■High dense cell design fo.A1SHB - P-Channel Enhancement Mode Power MOSFET
MS23P01S P-Channel Enhancement Mode Power MOSFET Description The MS23P01S uses advanced trench technology to provide excellent RDS(ON), low gate char.B20N03 - N-Channel MOSFET
CHIPSET-IC.COM N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 20mΩ ID 12A G UIS, .HAA2018 - 5.3W output power single-channel audio power amplifier
HAA2018 AB /D ,5.3W HAA2018FM、AB/D、、 AB、D 5.3W。EMI D: FM。 -5.3W (VDD=5.0V, RL =2Ω,THD+N=10%) -3.2W (VDD=5.0V, RL =4Ω,THD+N=10%) HAA20.A19T - P-Channel Enhancement Mode Power MOSFET
RM3401 P-Channel Enhancement Mode Power MOSFET Description The RM3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge .IRFZ44N - N-Channel MOSFET Transistor
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFZ44N FEATURES ·Drain Current –ID=49A@ TC=25℃ ·Drain Source Volta.MIX2018 - 4.8W single channel Class-F audio power amplifier
Machine Translated by Google MIX2018 4.8W Single Channel Class F Audio Power Amplifier describe MIX2018 is a high efficiency, filter-free 4.8W mono C.CS150N03 - Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET ○R CS150N03 A8 General Description: CS150N03 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced tr.AON6414A - 30V N-Channel MOSFET
AON6414A 30V N-Channel MOSFET General Description Product Summary The AON6414A uses advanced trench technology to provide excellent RDS(ON), low ga.AON6426 - 30V N-Channel MOSFET
AON6426 30V N-Channel MOSFET General Description The AON6426 combines advanced trench MOSFET technology with a low resistance package to provide extr.AON7403 - 30V P-Channel MOSFET
AON7403 30V P-Channel MOSFET General Description Product Summary The AON7403 uses advanced trench technology to provide excellent RDS(ON), and ultr.K3878 - N-Channel MOSFET
2SK3878 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π- MOSIV) 2SK3878 Switching Regulator Applications • Low drain-source ON-resistan.A1SHB - P-Channel Trench Power MOSFET
HM2301B P-Channel Enhancement Mode Power MOSFET Description The HM2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge.AX2358F - 6-channel input volume Controller
AX2358 AX2358 ,, 2 ——6 , 2 6 , 6 , I2C ,0 -79dB, 1dB ,,,, AV 。 z :VCC=5.0~9.0V z 4 6 z 2 ——6 z :0dB~-79dB, 1dB z 3.0Vrms(1KHZ,THD<1%) z ,.AON6380 - 30V N-Channel MOSFET
AON6380 30V N-Channel AlphaMOS General Description • Trench Power AlphaMOS (αMOS LV) technology • Low RDS(ON) • Low Gate Charge • High Current Capabi.D452 - N-Channel MOSFET
AOD452 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD452 uses advanced trench technology and design to pro.AON7408 - 30V N-Channel MOSFET
AON7408 30V N-Channel MOSFET General Description • The AON7408 uses advanced trench technology and design to provide excellent RDS(ON) with low gate .HY4008 - N-Channel MOSFET
HY4008W/A N-Channel Enhancement Mode MOSFET Features • 80V/200A RDS(ON) = 2.9 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Le.50N06 - N-CHANNEL MOSFET
50N06(F,B,H) 50A mps,60 Volts N-CHANNEL MOSFET FEATURE 50A,60V,RDS(ON)=16mΩ@VGS=10V/25A Low gate charge Low Ciss Fast switching 100% aval.