2.10-2.30 Datasheet | Specifications & PDF Download

® WON-TOP ELECTRONICS 3.0SMCJ SERIES 3000W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR Pb Features  Glass Passivated Die Construction  3000W Peak P

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ZEN3305A/08A/09A 10ADC-8051 1.  80518  Flash ROM：4K/8K/16K  RAM：256，256  512EEPROM  ： fOSC = 30kHz - 16.6MHz，VDD = 2.8V - 5.5V  （）： - ：32.768

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AON7410 30V N-Channel MOSFET General Description The AON7410 uses advanced trench technology and design to provide excellent RDS(ON) with low gate ch

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ZL30101 T1/E1 Stratum 3 System Synchronizer Data Sheet Features April 2010 • Supports Telcordia GR-1244-CORE Stratum 3 • Supports G.823 and G.824 f

Rating: 1 ★ (9 votes)

Rating: 1 ★ (9 votes)

R SCHOTTKY BARRIER DIODE HBR30100 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 30（2×15）A 100 V 175 ℃ 0.75V （@Tj=125℃） z z APPLICAT

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Click here for production status of specific part numbers. MAX30102 High-Sensitivity Pulse Oximeter and Heart-Rate Sensor for Wearable Health Genera

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DATASHEET ISL21080 300nA NanoPower Voltage References The ISL21080 analog voltage references feature low supply voltage operation at ultra-low 310nA

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2N3010 (SILICON) CASE 22 (TO-18) NPN silicon low-power transistor primarily designed for high-speed, saturated switching applications. Collector co

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Schottky Barrier Rectifier FEATURES ·Common Cathode Structure ·Low Power Loss,high Efficiency ·High Operating Junction Temperature ·Guarding for Overv

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A HALMA GROUP COMPANY w w a D . w S a t e e h COMPACT LED DOT MATRIX DISPLAY (CD3010) SERIES SPECIFICATION DATA U 4 t m o .c FRONT VIEW BACK

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NST30010MXV6T1G, NSVT30010MXV6T1G Dual Matched General Purpose Transistor PNP Matched Pair These transistors are housed in an ultra−small SOT563 pack

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20SQ030 thru 20SQ100 SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE - 30 to 100Volts FORWARD CURRENT - 15.0 Amperes R-6 FEATURES ●Metal of silicon recti

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PCB relays Single relays Mini power relay K (open and sealed) Catalog 1308028 Issued 01-05 Powertrain Systems Chassis Systems Safety Security Bo

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Rating: 1 ★ (8 votes)

R SCHOTTKY BARRIER DIODE HBR30100 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 30（2×15）A 100 V 175 ℃ 0.75V （@Tj=125℃） z z APPLICAT

Rating: 1 ★ (8 votes)

Silicon Avalanche Diodes 1000W Surface Mount Transient Voltage Suppressor RoHS 1KSMBJ Series ® The 1KSMBJ range of surface mount protectors utilize

Rating: 1 ★ (8 votes)

RTL8304MB-CG SINGLE-CHIP 4-PORT 10/100M ETHERNET SWITCH CONTROLLER DATASHEET (CONFIDENTIAL: Development Partners Only) Rev. 1.0 26 May 2014 Track ID:

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N-Channel Enhancement Mode Power MOSFET MXD30N100 DESCRIPTION The MXD30N100 uses advanced trench technology to provide excellent RDS(ON) and low gate

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NRND SCAN921025, SCAN921226 www.ti.com SNLS148C – DECEMBER 2001 – REVISED APRIL 2013 SCAN921025 and SCAN921226 30-80 MHz 10 Bit Bus LVDS Serialize

Rating: 1 ★ (8 votes)