2.2GHz Datasheet | Specifications & PDF Download

AC3236W 0.2GHz to 1GHz 4W Power Amplifier Features 200~1000MHz Frequency Range 3.3V~5.0V Operation 32dB Gain 36dBm P1dB @VCC=5V 250mA Quiescent Curre

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RF Low Noise FET CE3512K2 12 GHz Super Low Noise FET in Hollow Plastic PKG DESCRIPTION  Super Low Noise and High Gain  Hollow (Air Cavity) Plastic

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5021TR-E 22 GHz 1310 nm DFB Transceiver DATASHEET | NOVEMBER 2013 MICROWAVE Applications „ Radar Testing „ Signal Processing „ Phased Array Antenna

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NBB-312 0 Typical Applications • Narrow and Broadband Commercial and Military Radio Designs • Linear and Saturated Amplifiers Product Description The

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( DataSheet : www.DataSheet4U.com ) FMM5116X 20-32GHz Upconverter MMIC FEATURES • • • • Integrated Monolithic Upconverter High Linearity Single Supp

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RFUV1003 RFUV1003 12GHZ TO 16GHZ GAAS MMIC IQ UPCONVERTER Package: QFN, 32-Pin, 5mm x 5mm x 0.95mm N/C GND I N/C N/C GND Q N/C 32 N/C GND LOIN G

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RFPA2226 2.2GHz to 2.7GHz 2W InGaP AMPLIFIER RFPA2226 2.2GHz TO 2.7GHz 2W InGaP AMPLIFIER Package: QFN Features  P1dB=33.5dBm at 5V, 2.4GHz  802

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CMD290 ® 2-26 GHz GaN Low Noise Amplifier Product Overview The CMD290 is a wideband GaN MMIC distributed low noise amplifier die which operates fro

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FEATURES ► Broadband RxVGA interfacing LNA and beamformer to RF ADC ► Operating frequency range: 0.38 GHz to 12 GHz, two product variants ► ADL6332-A:

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EL2075C EL2075C 2GHz GBWP Gain-of-10 Stable Operational Amplifier Features • 2GHz gain-bandwidth product • Gain-of-10 stable • Conventional voltage-

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( DataSheet : www.DataSheet4U.com ) FMM5117X 20-32GHz Downconverter MMIC FEATURES • • • • Integrated Monolithic Downconverter High Linearity Single

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www.DataSheet4U.com LMH6703 1.2 GHz, Low Distortion Op Amp with Shutdown May 2005 LMH6703 1.2 GHz, Low Distortion Op Amp with Shutdown General Desc

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www.DataSheet4U.net PCIe/104 Features • Intel® Core™ i7, 2.2 GHz • Up to 4GB DDR3-1333 DRAM SoDIMM204 • Type 1 Bottom-Stacking PCI/104 Express V2.0 w

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TC2623 12GHz Super Low Noise HEMT AlGaAs/GaAs Field Effect Transistor Description The TC2623 is a X/Ku band Schottky barrier High Electron Mobility Tr

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U U FEATURES ■ Single 1.8V to 5.25V Supply ■ Direct IQ Modulator with Integrated 90° Phase Shifter* ■ Four Step RF Power Control ■ 120MHz Modulation

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Features nn Upconversion or Downconversion nn High IIP3: +24.4dBm at 5.8GHz +21.4dBm at 9GHz nn 7.1dB Conversion Loss at 5.8GHz nn +15.2dBm Input P1

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® General Description Qorvo’s TGA2578 is a wideband power amplifier fabricated on Qorvo’s 0.25 um GaN on SiC process. Operating from 2 to 6 GHz, it ac

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CHM1291 25-32GHz Single Side Band Mixer GaAs Monolithic Microwave IC Description The CHM1291 is a multifunction chip (MFC) which integrates a LO buffe

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RF Low Noise FET CE3514M4 12GHz LoEwnteNroaiSsheoFrtEDTociunmDeunta/TlitMleoNladmPelHaesrteic PKG DESCRIPTION  Low Noise and High Gain  Original Du

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