2.50V Datasheet | Specifications & PDF Download

Silan Microelectronics SD4938_Datasheet 150V CURRENT MODE PWM CONTROLLER DESCRIPTION SD4938 is a current mode PWM controller with 150V MOSFET used

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OB2136 650V 3-Phase Half-Bridge Gate-Driver IC General Description OB2136 is a monolithic three-phase half-bridge gate driver IC designed for high vo

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BSS138K 50V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 50V RDS(ON) Max 3.5Ω @ VGS = 10V ID Max TA = +25°C 0.31A Description and Appl

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AUO Confidential For DATAMODUL Internal Use Only On 2016/07/22 □Preliminary Specifications ■Final Specifications Module Model Name 5.0 Inch Color T

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OSPF10N65C http://www.osen.net.cn 650V N-CHANNEL MOSFET  Features：  Fast switching speed  High input impedance and low level drive  Avalanche

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7N65/F7N65/I7N65/E7N65/B7N65/D7N65 7A 650V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs, is obtained by t

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8N25/F8N25/I8N25/ E8N25/B8N25/D8N25 8A 250V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs, is obtained by

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Silan Microelectronics SVF10N65T/F/K/S_Datasheet 10A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N65T/F/K/S is an N-channel enhancement mode po

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I06N60T-VB I06N60T-VB Datasheet /$IBOOFM
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%4 Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max. (nC

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SJMOS N-MOSFET 650V, 0.27Ω, A Features • Much lower Ron*A performance for On-state efficiency • Better efficiency due to very low FOM • Qualified fo

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NX5020UNBKW 50 V, N-channel Trench MOSFET 10 April 2025 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor

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AUO Confidential For DATAMODUL Internal Use Only On 2014/07/03 □ Preliminary Specification ■ Final Specification Module Model Name 5.0 Inch Color T

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AUO Confidential For DATAMODUL Internal Use Only On 2015/08/17 □Preliminary Specifications ■Final Specifications Module Model Name 5.0 Inch Color T

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F9241-VB F9241-VB Datasheet P-Channel 150 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 150 0.100 at VGS = - 10 V 0.120 a

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SCX65R380C 650V N-CHANNEL POWER MOSFET GENERAL DESCRIPTION The Power MOSFET is fabricated using advanced super junction technology. The resulting dev

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150V, 200A N-CHANNEL POWER MOSFET GENERAL DESCRIPTION The SGP154R0Tuses advanced SGT technology and design to provide excellent RDS(on) with low gate

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MPQ3386-AEC1 50V, 6 String White LED Driver AEC-Q100 Qualified DESCRIPTION The MPQ3386 is a step-up converter with 6channel current sources designed

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PDTC144WM-Q 50 V, 100 mA NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 22 kΩ 27 June 2025 Product data sheet 1. General description NPN Resi

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PL90N25T63 PL90N25T47 PL90N25T2 Feature ◇ High Speed Power Smooth Switching ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇

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