2.50V Datasheet | Specifications & PDF Download

Silan Microelectronics SVF10N65T/F/K/S_Datasheet 10A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N65T/F/K/S is an N-channel enhancement mode po

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IKY150N65EH7 High speed and low saturation voltage 650 V TRENCHSTOP™ IGBT7 technology Final datasheet High speed and low saturation voltage 650 V TRE

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Public IGLT65R055B2 Preliminary datasheet CoolGaN™ BDS 650 V G5 CoolGaN™ Bi‑directional switch, enhancement‑mode Infineon's CoolGaN™ Bi‑Directional S

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K2022-VB K2022-VB Datasheet /$IBOOFM
7
%4 Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max. (nC) Qg

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Silan Microelectronics SD4938_Datasheet 150V CURRENT MODE PWM CONTROLLER DESCRIPTION SD4938 is a current mode PWM controller with 150V MOSFET used

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SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 650V Super Junction Power MOSFET Gen-Ⅱ SS*65R190S2 Rev. 1.7 A

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SVF12N65T/F_Datasheet 12A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF12N65T/F is an N-channel enhancement mode power MOS field effect transistor wh

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10A, 150V SCHOTTKY RECTIFIER GENERAL DESCRIPTION SBD10C150T/F is schottky rectifier fabricated in silicon epitaxial planar technology. Typical applica

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ULN2803-SMD ARRAY DARLINGTON 5A 50V TTL SM 8ch Darlington Sink Driver The ULN2803APG / AFWG Series are high−voltage, high−current darlington drivers

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SVD4N65T/SVD4N65F 4A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD4N65T/F is an N-channel enhancement mode power MOS field effect transistor which is

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DSBG Device Solutions Business Group US18650VTC4 Tentative Technical Information Sony Energy Devices Corporation Department 1 Energy Division 1 1 Gen

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TO-247-3 NGW50T65M3DFP 650 V, 50 A trench field-stop IGBT with full rated silicon diode Rev. 1.1 — 7 March 2025 Product data sheet 1. General des

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MBF15T65PEH 650V FieldStop Trench IGBT Datasheet MBF15T65PEH 650V Field Stop IGBT General Description Features This IGBT is produced using advance

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IMZA65R040M2H MOSFET CoolSiCª MOSFET 650 V G2 Built on Infineon’s robust 2nd generation Silicon Carbide trench technology, the 650 V CoolSiC™ MOSFET

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Silan Microelectronics SVS7N65F/D/MJ_Datasheet 7A, 650V SUPER JUNCTION MOS POWER TRANSISTOR GENERAL DESCRIPTION SVS7N65F/D/MJ is an N-channel enhan

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Silan Microelectronics SGT70N65FDM1P7_Datasheet 70A, 650V FIELD STOP IGBT DESCRIPTION SGT70N65FD1M1P7 adopts Field Stop IGBT technology, offer the o

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1ED21x7x Family 1ED21x7x Family Datasheet 650 V high-side gate driver with over current protection (OCP), multi-function RCIN/Fault/Enable (RFE) and

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1ED21x7x Family 1ED21x7x Family Datasheet 650 V high-side gate driver with over current protection (OCP), multi-function RCIN/Fault/Enable (RFE) and

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SVF7N65T/F_Datasheet 7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N65T/F is an N-channel enhancement mode power MOS field effect transistor which

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