200-V Datasheet | Specifications & PDF Download

LM3200 Miniature, Adjustable, Step-Down DC-DC Converter with Bypass Mode for RF Power Amplifiers November 2004 LM3200 Miniature, Adjustable, Step-Do

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www.DataSheet4U.com ?REP.\2ED BY: DATE .- \PPRO’/ID BY: DATE LIQUID CRYSTAL DISPLAY GROUP SHARP CORPORATION SPEC No. LC92X1OA FILE No. ISSUE Ott

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TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications 2SC5200 Unit: mm • High breakdown voltage: VCEO = 230 V (mi

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IP5413 200mA 200mA TWS SOC 1   200mA  92%  ，   200mA  ，  4.20V、4.30V、4.35V 4.4V 4.20V，   4/2/1 LED   /，  20 µA  BO

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ST7265 1200CH System-On-Chip Driver for 800RGBx480 TFT LCD Datasheet Sitronix reserves the right to change the contents in this document without prior

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Translated from chinese by: Esquiloesperto (Messias-BH.) ATX 2005 POWER SUPPLY PWM SUPERVISOR Power Supply Pulse Width Modulation Integrated Circuit C

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CD2003GP/GB FM/AM RADIO IC 1、 Overvie w The CD2003GP/GB is a monolithic IC designed for use as a FM/AM radio system. Combined with audio power amplifi

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ID2006 Chipown High-Side & Low-Side Gate Drive IC General description The ID2006 is a high voltage, high speed power MOSFET driver with independent

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Global LCD Panel Exchange Center www.panelook.com PROPRIETARY NOTE THIS SPECIFICATION IS THE PROPERTY OF BOE DT AND SHALL NOT BEG REPRODUCED OR COPI

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TIGER Machine Translated by Google ELECTRONIC CO.,LTD Bipolar Circuit CS2003CP Seven-channel Darlington tube driver circuit 1. Overview CS2003CP i

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MOSFET 600V 200A IGBT Número de parte: GT30J127 Descripción: IGBT PARA APLICACIONES DE PANTALLAS DE TELEVISION DE PLASMA TO-220 Voltaje: 600V Corrient

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E2 IGBT Modules Technical specifications • Can be configured as – Power integrated module (PIM) – 6-pack – 7-pack – Shunts and NTC on request – Custom d

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® TDA2003 10W CAR RADIO AUDIO AMPLIFIER DESCRIPTION The TDA 2003 has improved performance with the same pin configuration as the TDA 2002. The additi

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TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications 2SC5200 Unit: mm • High breakdown voltage: VCEO = 230 V (mi

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www.DataSheet4U.com LAMPEX LM16200 [16 x 2, 1/16 MUX] 8.0 1 ALPHANUMERIC DOT MATRIX LCM DIMENSION IN MM 9.5(13.5)* 5.0(9.0)* 80.0±0.5 [3.15±0.020]

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2SC5200 High power NPN epitaxial planar bipolar transistor Preliminary data Features ■ High breakdown voltage VCEO = 230 V ■ Typical fT = 30 MHz t

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isc Silicon NPN Power Transistor 2SC5200 DESCRIPTION ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V

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ULN2001A/ULN2001D ULN2001A ULN2001D 、 ULN2001A/ULN2001D 、 ， 。， 、。 500mA 。 。 、、(LED)、 。 ULN2001A/ULN2001D 2.7K ， 5V TTL/CMOS ， 。 1B 2B 3B ，U

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Automotive Relays PCB Double Relays Double Mini Relay DMR n Limiting continuous current 30 A n Easiest PCB routing among all PCB relays Typical app

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