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TENERGY
18650 - 2200mAh Li-Ion Cell
Tenergy Corporation 436 Kato Terrace Fremont CA 94539 Tel: 510-687-0388 Fax: 510-687-0328 TENERGY 18650 2200mAh Li-Ion Cell Product Name: Tenergy L.
TGS
CS2003CP - Seven Darlington Arrays
TIGER Machine Translated by Google ELECTRONIC CO.,LTD Bipolar Circuit CS2003CP Seven-channel Darlington tube driver circuit 1. Overview CS2003CP i.
Toshiba
C5200 - Silicon NPN Transistor
TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications 2SC5200 Unit: mm • High breakdown voltage: VCEO = 230 V (mi.
ETC
ATX2005 - POWER SUPPLY PWM SUPERVISOR
Translated from chinese by: Esquiloesperto (Messias-BH.) ATX 2005 POWER SUPPLY PWM SUPERVISOR Power Supply Pulse Width Modulation Integrated Circuit C.
BOE
HV320WXC-200 - TFT LCD
Global LCD Panel Exchange Center www.panelook.com PROPRIETARY NOTE THIS SPECIFICATION IS THE PROPERTY OF BOE DT AND SHALL NOT BEG REPRODUCED OR COPI.
ETC
30J127 - 600V 200A IGBT MOSFET
MOSFET 600V 200A IGBT Número de parte: GT30J127 Descripción: IGBT PARA APLICACIONES DE PANTALLAS DE TELEVISION DE PLASMA TO-220 Voltaje: 600V Corrient.
STMicroelectronics
2SC5200 - NPN Transistor
2SC5200 High power NPN epitaxial planar bipolar transistor Preliminary data Features ■ High breakdown voltage VCEO = 230 V ■ Typical fT = 30 MHz t.
Toshiba
2SC5200N - NPN Transistor
Bipolar Transistors Silicon NPN Triple-Diffused Type 2SC5200N 1. Applications • Power Amplifiers 2. Features (1) High collector voltage: VCEO = 230 V .
UTC
ULN2003 - 7CH DARLINGTON SINK DRIVER
UNISONIC TECHNOLOGIES CO., LTD ULN2003 LINEAR INTEGRATED CIRCUIT 7CH DARLINGTON SINK DRIVER DESCRIPTION The UTC ULN2003 are high-voltage, high-c.
HAOHAI
BTA100-1200B - Specially Varieties 4Q-Triacs
100A 【】 BTA100 Series Specially Varieties 4Q-Triacs ：NPNPN，，； ：；、；、。 ：、、、、、、；。 Part Number BTA100-600B BTA100-800B BTA100-1000B BTA100-1200B B.
UNIKC
P2003BDG - N-Channel MOSFET
P2003BDG N-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 25V 20mΩ @VGS = 10V ID 28A TO-252 ABSOLUTE MAXIMUM RATI.
Rohm
RF2001 - Fast recovery Diodes
www.DataSheet4U.com RF Diodes 1series Fast recovery Diodes (Silicon Epitaxial Planar) RF 1 series zExternal dimensions (Unit : mm) CPD 1.5 5.5 2.3 .
Toshiba Semiconductor
2SC5200 - NPN TRANSISTOR
TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications 2SC5200 Unit: mm • High breakdown voltage: VCEO = 230 V (mi.
ETC
AT2005B - Power Supply Controller
Микросхема контроллера для системных блоков питания АТ2005В. Данная техническая спецификация является ознакомительной и не может заменить собой учтенн.
TE
V23084-C2001-A403 - Automotive Relays
Automotive Relays PCB Double Relays Double Mini Relay DMR n Limiting continuous current 30 A n Easiest PCB routing among all PCB relays Typical app.
LG
LM200WD1-TLA1 - HD + TFT LCD
LM200WD1 Liquid Crystal Display Product Specification SPECIFICATION FOR APPROVAL ( ) Preliminary Specification (◆) Final Specification Title BUYER.
ON Semiconductor
ULN2003AG - Darlington Transistor Arrays
ULN2003A, ULQ2003A High Voltage, High Current Darlington Transistor Arrays The seven NPN Darlington connected transistors in these arrays are well su.
LG
LM200WD3-TLC9 - HD + TFT LCD
LM200WD3 Liquid Crystal Display Product Specification SPECIFICATION FOR APPROVAL (◆) Preliminary Specification (◆) Final Specification Title BUYER.
