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YCL
20F001 - 10 Base T Low Pass Filter
YCL 10 Base T Low Pass Filter Specifications Parameter Insertion loss Return loss(TX &RX) Cut off frequency Cross talk CMRR Attenuation(TX &RX) Sche.
YCL
20F001NG - 10 BASE T Filter PTH module
Feature 20F001NG 10 BASE T Filter PTH module ♦ ”G” stands for RoHS. ♦ High attenuation from 7th & 5th order filter used for TX & RX signal respectiv.
MACOM
CGH40120F - RF Power GaN HEMT
CGH40120F 120 W, RF Power GaN HEMT Description The CGH40120F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH4.
Danfoss Silicon Power GmbH
DP20F600T101627 - E2 IGBT
E2 IGBT Modules Technical specifications • Can be configured as – Power integrated module (PIM) – 6-pack – 7-pack – Shunts and NTC on request – Custom d.
Texas Instruments
TMS320F2800157 - Real-Time Microcontrollers
TMS320F2800157-Q1, TMS320F2800157, TMS320F2800156-Q1, TMS320F2800155-Q1 TMS320F2800155, TMS320F2800154-Q1, TMS320F2800153-Q1, TMS320F2800152-Q1 SPRSP6.
Texas Instruments
TMS320F2800157-Q1 - Real-Time Microcontrollers
TMS320F2800157-Q1, TMS320F2800157, TMS320F2800156-Q1, TMS320F2800155-Q1 TMS320F2800155, TMS320F2800154-Q1, TMS320F2800153-Q1, TMS320F2800152-Q1 SPRSP6.
Texas Instruments
TMS320F2800152-Q1 - Real-Time Microcontrollers
TMS320F2800157-Q1, TMS320F2800157, TMS320F2800156-Q1, TMS320F2800155-Q1 TMS320F2800155, TMS320F2800154-Q1, TMS320F2800153-Q1, TMS320F2800152-Q1 SPRSP6.
Texas Instruments
TMS320F2800153-Q1 - Real-Time Microcontrollers
TMS320F2800157-Q1, TMS320F2800157, TMS320F2800156-Q1, TMS320F2800155-Q1 TMS320F2800155, TMS320F2800154-Q1, TMS320F2800153-Q1, TMS320F2800152-Q1 SPRSP6.
Texas Instruments
TMS320F2800155 - Real-Time Microcontrollers
TMS320F2800157-Q1, TMS320F2800157, TMS320F2800156-Q1, TMS320F2800155-Q1 TMS320F2800155, TMS320F2800154-Q1, TMS320F2800153-Q1, TMS320F2800152-Q1 SPRSP6.
Texas Instruments
TMS320F2800154-Q1 - Real-Time Microcontrollers
TMS320F2800157-Q1, TMS320F2800157, TMS320F2800156-Q1, TMS320F2800155-Q1 TMS320F2800155, TMS320F2800154-Q1, TMS320F2800153-Q1, TMS320F2800152-Q1 SPRSP6.
Texas Instruments
TMS320F2800156-Q1 - Real-Time Microcontrollers
TMS320F2800157-Q1, TMS320F2800157, TMS320F2800156-Q1, TMS320F2800155-Q1 TMS320F2800155, TMS320F2800154-Q1, TMS320F2800153-Q1, TMS320F2800152-Q1 SPRSP6.
Texas Instruments
TMS320F2800155-Q1 - Real-Time Microcontrollers
TMS320F2800157-Q1, TMS320F2800157, TMS320F2800156-Q1, TMS320F2800155-Q1 TMS320F2800155, TMS320F2800154-Q1, TMS320F2800153-Q1, TMS320F2800152-Q1 SPRSP6.
FUZETEC
FRVL010-120F - Radial Leaded PTC
III - Product - Radial Leaded PTC FRVL Series RoHS Compliant & Lead Free Application : Line Voltage Power Supply, Transformer and Appliances Produc.
FUZETEC
FRVL017-120F - Radial Leaded PTC
III - Product - Radial Leaded PTC FRVL Series RoHS Compliant & Lead Free Application : Line Voltage Power Supply, Transformer and Appliances Produc.
CYStech Electronics
MBR10120FP - Schottky Barrier Rectifiers
CYStech Electronics Corp. Spec. No. : C467FP Issued Date : 2009.03.19 Revised Date : 2009.10.23 Page No. : 1/4 10Amp. Schottky Barrier Rectifiers MB.
NIC
NNR101M50V10x20F - Non-Polar Aluminum Electrolytic Capacitors
Non-Polar Aluminum Electrolytic Capacitors RADIAL LEADS NON-POLARIZED ALUMINUM ELECTROLYTIC CAPACITORS FEATURES • DESIGNED FOR APPLICATIONS WITH REVER.
Pan Jit International
SB20150FCT - (SB2020FCT - SB20200FCT) Isolation Schottky Barrier Rectifiers
www.DataSheet4U.com DATA SHEET SB2020FCT~SB20200FCT ISOLATION SCHOTTKY BARRIER RECTIFIERS VOLTAGE FEATURES .112(2.85) .100(2.55) .272(6.9) .248(6.3) .
KEC semiconductor
KHB019N20F1 - High Voltage MOSFETs
www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching tim.
Pan Jit International
SB10150FCT - (SB1020FCT - SB10150FCT) SCHOTTKY BARRIER RECTIFIER
www.DataSheet4U.com DATA SHEET SB1020FCT~SB10150FCT ISOLATION SCHOTTKY BARRIER RECTIFIERS VOLTAGE FEATURES .112(2.85) .100(2.55) .272(6.9) .248(6.3) .
SUMITOMO
FLM1011-20F - X / Ku-Band Internally Matched FET
FLM1011-20F X,Ku-Band Internally Matched FET FEATURES ・High Output Power: P1dB=43.0dBm(Typ.) ・High Gain: G1dB=7.0dB(Typ.) ・High PAE: ηadd=27%(Typ.) ・B.
