UNISONIC TECHNOLOGIES CO., LTD 20N65 20A, 650V N-C.
UTC
20N65 - N-CHANNEL POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD 20N65 20A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 20N65 is an N-channel enhancement mode power MOSFET using.
Huajing Microelectronics
CS20N65FA9H - Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET CS20N65F A9H ○R General Description： CS20N65F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-.
INCHANGE
STP20N65M5 - N-Channel MOSFET
Isc N-Channel MOSFET Transistor ·FEATURES ·Typical RDS(on)=0.16Ω ·Excellent switching performance ·100% avalanche tested ·Minimum Lot-to-Lot variation.
CR Micro
CS20N65A8H - Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET ○R CS20N65 A8H General Description： CS20N65 A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-a.
IXYS
IXTH20N65X - Power MOSFET
Preliminary Technical Information X-Class Power MOSFET N-Channel Enhancement Mode IXTA20N65X IXTP20N65X IXTH20N65X VDSS = ID25 = RDS(on) 650V 20A.
JILIN SINO-MICROELECTRONICS
JCS20N65H - N-CHANNEL MOSFET
N R N-CHANNEL MOSFET JCS20N65H MAIN CHARACTERISTICS Package ID 20A VDSS 650 V Rdson（@Vgs=10V） 0.43 Ω Qg 50nC z z z LED APPLICATIONS z High.
STMicroelectronics
STF20N65M5 - N-channel Power MOSFET
STF20N65M5, STFI20N65M5 N-channel 650 V, 0.160 Ω typ., 18 A MDmesh™ V Power MOSFET in TO-220FP and I2PAKFP packages Datasheet — production data Featu.
STMicroelectronics
STFI20N65M5 - N-channel Power MOSFET
STF20N65M5, STFI20N65M5 N-channel 650 V, 0.160 Ω typ., 18 A MDmesh™ V Power MOSFET in TO-220FP and I2PAKFP packages Datasheet — production data Featu.
Infineon
IKP20N65H5 - IGBT
IGBT High speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft anti parallel diode IKP20N65H5 650V DuoPack IGBT and Diode Hig.
INCHANGE
STF20N65M5 - N-Channel MOSFET
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 18A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance .
INCHANGE
STI20N65M5 - N-Channel MOSFET
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 18A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance .
JILIN SINO
JCS20N65EI - N-CHANNEL MOSFET
N R N-CHANNEL MOSFET JCS20N65EI MAIN CHARACTERISTICS Package ID VDSS Rdson-max （Vgs=10V） Qg-Typ 20A 650V 0.42Ω 64.6nC ⚫ ⚫ ⚫ LED APPLICA.CS20N65A7 - N-Channel Enhancement Mode Power MOSFET
N-Channel Enhancement Mode Power MOSFET CS20N65A MAIN CHARACTERISTICS ID VDSS RDSON-max （@VGS=10V） QG-typ 20A 650V 0.5Ω 58nC CS20N65A1/TO-220AB F.CS20N65A3 - N-Channel Enhancement Mode Power MOSFET
N-Channel Enhancement Mode Power MOSFET CS20N65A MAIN CHARACTERISTICS ID VDSS RDSON-max （@VGS=10V） QG-typ 20A 650V 0.5Ω 58nC CS20N65A1/TO-220AB F.
Din-Tek
DTK20N65SJ - N-Channel Super Junction Power MOSFET
DTN20N65SJ/DTP20N65SJ/DTP20N65FSJ/DTK20N65SJ www.din-tek.jp N-Channel 650-V (D-S) Super Junction MOSFET PRODUCT SUMMARY VDS (V) at TJ max. 650 RDS.
IXYS
IXTP20N65X - Power MOSFET
Preliminary Technical Information X-Class Power MOSFET N-Channel Enhancement Mode IXTA20N65X IXTP20N65X IXTH20N65X VDSS = ID25 = RDS(on) 650V 20A.
IXYS
IXFK120N65X2 - Power MOSFET
Preliminary Technical Information X2-Class HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK120N65X2 IXFX.
IXYS
IXFX120N65X2 - Power MOSFET
Preliminary Technical Information X2-Class HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK120N65X2 IXFX.
IXYS
IXYH120N65C3 - IGBT
Advance Technical Information XPTTM 650V IGBT GenX3TM Extreme Light Punch Through IGBT for 20-60kHz Switching IXYH120N65C3 VCES = 650V IC110 = 120A.
IXYS
IXYH20N65C3 - IGBT
Preliminary Technical Information XPTTM 650V IGBT GenX3TM Extreme Light Punch Through IGBT for 20-60 kHz Switching IXYA20N65C3 IXYH20N65C3 VCES = 6.
