20N65 Datasheet | Specifications & PDF Download

UNISONIC TECHNOLOGIES CO., LTD 20N65 20A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 20N65 is an N-channel enhancement mode power MOSFET using

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WFF20N65SAH Product Description Silicon N-Channel MOSFET Features • 650V, 20A • RDS(ON) = 0.19Ω (Max.) @ VGS = 10V, ID = 10A • Very low FOM RDS(ON)XQ

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N-Channel Enhancement Mode Power MOSFET CS20N65A MAIN CHARACTERISTICS ID VDSS RDSON-max （@VGS=10V） QG-typ 20A 650V 0.5Ω 58nC CS20N65A1/TO-220AB F

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Silicon N-Channel Power MOSFET CS20N65F A9H ○R General Description： CS20N65F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-

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N R N-CHANNEL MOSFET JCS20N65H MAIN CHARACTERISTICS Package ID 20A VDSS 650 V Rdson（@Vgs=10V） 0.43 Ω Qg 50nC z z z LED APPLICATIONS z High

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STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5 N-channel 650 V, 0.160 Ω typ., 18 A MDmesh™ V Power MOSFET in D2PAK, I2PAK, TO-220 and TO-247 packages

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IKY120N65EH7 High speed and low saturation voltage 650 V TRENCHSTOP™ IGBT7 technology High speed and low saturation voltage 650 V TRENCHSTOP™ IGBT7 t

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N R N-CHANNEL MOSFET JCS20N65EI MAIN CHARACTERISTICS Package ID VDSS Rdson-max （Vgs=10V） Qg-Typ 20A 650V 0.42Ω 64.6nC ⚫ ⚫ ⚫ LED APPLICA

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Preliminary Data Sheet ICE20N65FP ICE20N65FP N-Channel Enhancement Mode MOSFET Features • Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability

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UNISONIC TECHNOLOGIES CO., LTD UTG20N65-S Insulated Gate Bipolar Transistor 650V TRENCH GATE FIELD-STOP IGBT  DESCRIPTION The UTC UTG20N65-S is a

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N R N-CHANNEL MOSFET JCS20N65EI MAIN CHARACTERISTICS Package ID VDSS Rdson-max （Vgs=10V） Qg-Typ 20A 650V 0.42Ω 64.6nC ⚫ ⚫ ⚫ LED APPLICA

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GOFORD GC20N65 Description The GC20N65 uses advanced super junction technology and design to provide excellent RDS(ON) and low gate charge. This dev

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N-Channel Enhancement Mode Power MOSFET CS20N65A MAIN CHARACTERISTICS ID VDSS RDSON-max （@VGS=10V） QG-typ 20A 650V 0.5Ω 58nC CS20N65A1/TO-220AB F

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TSP20N65S/TSF20N65S/TSB20N65S 650V N-Channel MOSFET TSP20N65S,TSF20N65S, TSB20N65S 650V N-Channel MOSFET September, 2013 SJ-FET Description SJ-FET

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Preliminary Technical Information XPTTM 650V IGBT GenX3TM w/Diode (Electrically Isolated Tab) IXYP20N65C3D1M Extreme Light Punch Through IGBT for 2

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SJTA20N65C Super-Junction MOSFET Applications: ● Adaptor ● Charger ● SMPS VDSS 650V Lead Free Package and Finish RDS(ON)(Typ.) 0.14Ω ID 20A Feat

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Silicon N-Channel Power MOSFET ○R CS20N65 A8H General Description： CS20N65 A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-a

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SAMWIN SW20N65K N-channel TO-220/TO-220F MOSFET Features ■ High ruggedness ■ RDS(ON) (Max0.19Ω)@VGS=10V ■ Gate Charge (Typical 60nC) ■ Improved dv/

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Preliminary Technical Information X2-Class Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTK120N65X2 IXTX120N65X2 VDSS = ID25 = RDS(on)

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