20N65 Datasheet | Specifications & PDF Download

UNISONIC TECHNOLOGIES CO., LTD 20N65 20A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 20N65 is an N-channel enhancement mode power MOSFET using

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SJMOS N-MOSFET 650V, 0.27Ω, A Features • Much lower Ron*A performance for On-state efficiency • Better efficiency due to very low FOM • Qualified fo

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●General Description The SJ MOSFET HMS20N65D8 has the low RDS(on), low gate charge,fast switching and excellent avalanche characteristics.This device

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SJMOS N-MOSFET 650V, 0.27Ω, A Features • Much lower Ron*A performance for On-state efficiency • Better efficiency due to very low FOM • Qualified fo

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SMF20N65-Z 650V N-Channel MOSFET ●Features： ■ 20.0A, 650V, RDS(on)(Typ) =380mΩ@VGS=10V ■ Low Gate Charge ■ Low Crss ■ 100% Avalanche Tested ■ Fast Sw

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N-Channel Enhancement Mode Power MOSFET CS20N65A MAIN CHARACTERISTICS ID VDSS RDSON-max （@VGS=10V） QG-typ 20A 650V 0.5Ω 58nC CS20N65A1/TO-220AB F

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STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5 N-channel 650 V, 0.160 Ω typ., 18 A MDmesh™ V Power MOSFET in D2PAK, I2PAK, TO-220 and TO-247 packages

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XPTTM 650V IGBT GenX3TM w/Diode IXYA20N65C3D1 IXYP20N65C3D1 Extreme Light Punch Through IGBT for 20-60kHz Switching Symbol VCES VCGR VGES VGEM IC25

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MSJP20N65 Features • Optimized Body Diode Reverse Recovery Performance • Low On-resistance and Low Conduction Losses • Ultra Low Gate Charge Cause Lo

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Preliminary Technical Information XPTTM 650V IGBT GenX3TM w/Diode (Electrically Isolated Tab) IXYP20N65C3D1M Extreme Light Punch Through IGBT for 2

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LSC20N65 LonFET Lonten N-channel 650V, 20A, 0.18Ω LonFETTM Power MOSFET Description LonFETTM Power MOSFET is fabricated using advanced super junction

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NCE20N65T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction technology and design to provi

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UNISONIC TECHNOLOGIES CO., LTD UTG20N65-S Insulated Gate Bipolar Transistor 650V TRENCH GATE FIELD-STOP IGBT  DESCRIPTION The UTC UTG20N65-S is a

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Preliminary Technical Information X2-Class Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTK120N65X2 IXTX120N65X2 VDSS = ID25 = RDS(on)

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NCE20N65,NCE20N65F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction technology and design

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isc N-Channel MOSFET Transistor IXTP20N65XM ·FEATURES ·High power dissipation ·Static drain-source on-resistance: RDS(on) ≤ 210mΩ@VGS=10V ·100% aval

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LSB20N65 LonFET Lonten N-channel 650V, 20A, 0.15Ω LonFETTM Power MOSFET Description LonFETTM Power MOSFET is fabricated using advanced super junction

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N R N-CHANNEL MOSFET JCS20N65EI MAIN CHARACTERISTICS Package ID VDSS Rdson-max （Vgs=10V） Qg-Typ 20A 650V 0.42Ω 64.6nC ⚫ ⚫ ⚫ LED APPLICA

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N-Channel Enhancement Mode Power MOSFET CS20N65A MAIN CHARACTERISTICS ID VDSS RDSON-max （@VGS=10V） QG-typ 20A 650V 0.5Ω 58nC CS20N65A1/TO-220AB F

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Advance Technical Information XPTTM 650V IGBT GenX3TM w/ Diode IXYN120N65C3D1 Extreme Light Punch through IGBT for 20-60kHz Switching Symbol VCES

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