2170 Datasheet | Specifications & PDF Download

isc Silicon NPN Power Transistor TT2170LS DESCRIPTION ·High Switching Speed ·High Voltage ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for

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Product Folder Order Now Technical Documents Tools & Software Support & Community Reference Design LMZ21701 SNVS853E – AUGUST 2012 – REVISED AUG

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PTF210901 LDMOS RF Power Field Effect Transistor 90 W, 2110–2170 MHz Description The PTF210901 is an internally matched 90 W GOLDMOS FET intended for

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NVP2170E Data Sheet High End CCD Image Signal Processor Information contained here is subject to change without notice. Make sure to check and use an

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Preliminary Data Sheet No. PD60186-C IR2170(S) OVER CURRENT SENSING IC Features • Floating channel up to +600V • Monolithic integration • Overcurre

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advance specification GTVA221701FA advance specification Thermally-Enhanced High Power RF GaN HEMT 170 W, 50 V, 1805 – 2170 MHz Description The GTV

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HA12141NT, HA12142NT, HA12170NT, HA12161FP, HA12162FP Dolby B- and C-Type Noise Reduction System ADE-207-036B (Z) 3rd Edition Jun. 1999 Description H

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FDS2170N7 May 2003 FDS2170N7 200V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve

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Reflective Photosensors (Photo Reflectors) CNB1302 Reflective Photosensor Overview CNB1302 is a small, thin reflective photosensor consisting of a hi

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✄ VMIVME-2170A 32-bit Optically Isolated Digital Output ✪✄✰✮✄✯❊❘q✄✬❙◗❚❊❘ • • • • • • • • • • • • 32 optically isolated outputs 2.5 or 300 mA output

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STPS2170 Datasheet 170 V, 2 A power Schottky rectifier Product status STPS2170 Product summary Symbol Value IF(AV) 2A VRRM 170 V T j(max.) 1

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Si3217x-C PROSLIC® SINGLE-CHIP FXS SOLUTION Si3217x-C Features  Complete FXS solution in 5 x 7 mm  Software-programmable  Performs all BORSCHT

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NON-CATALOG Surface Mount Voltage Controlled Oscillator Linear Tuning 1730 to 2170 MHz ROS-2170-1319+ Features • linear tuning characteristics • low

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PTF211802 LDMOS RF Power Field Effect Transistor 180 W, 2110–2170 MHz Description The PTF211802 is a 180 W, internally matched, laterally double–diff

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Si3217xB/Si3291x PROSLIC® SINGLE-CHIP FXS SOLUTION WITH FXO OPTION Si3217x Features  Performs all BORSCHT functions  Tracking dc-dc controller

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Si3217xB/Si3291x PROSLIC® SINGLE-CHIP FXS SOLUTION WITH FXO OPTION Si3217x Features  Performs all BORSCHT functions  Tracking dc-dc controller

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Si3217xB/Si3291x PROSLIC® SINGLE-CHIP FXS SOLUTION WITH FXO OPTION Si3217x Features  Performs all BORSCHT functions  Tracking dc-dc controller

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PA1223 5 Watt Amplifier 2110-2170 MHz. 28v. GaAs Ultra Linear Power Features (typical values) High IP3

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1N2163 thru 1N2171 (SILICON) lN2163A thru lN2171A lN3580, A, Bthru lN3583, A, B TEMPERATURE-COMPENSATED ZENER REFERENCE DIODES Highly reliable refere

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