224-channel Datasheet | Specifications & PDF Download

PS224 Version Issue Date File Name Total Pages : A.004 : 2005/08/19 : SP-PS224-A.004.doc : 11 4-Channel Secondary Monitoring IC Free Datasheet http:

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF224 DESCRIPTION ·Drain Current ID=3.8A@ TC=25℃ ·Drain Source Vol

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PS224C Version : A.005 Issue Date : 2009/07/31 File Name : SP-PS224C-A.005.doc Total Pages : 11 4-Channel Secondary Monitoring IC 9 7 1 SILI

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http://www.ncepower.com Pb Free Product NCE0224K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0224K uses advanced trench technolog

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XP4224GM Halogen-Free Product DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-Resistance ▼ Simple Drive Requirement ▼ Dual N MOSFET Package ▼ R

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IRFR224B / IRFU224B November 2001 IRFR224B / IRFU224B 250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect

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www.DataSheet4U.com Features • maXTouch™ Touchscreen – True 12-bit multi-touch with independent XY tracking for up to 10 concurrent touches in real t

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ACPL-224/ACPL-244 AC Input, Multi-Channel Half-Pitch Phototransistor Optocoupler Data Sheet Description The ACPL-224 is an AC-input dual-channel, hal

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http://www.ncepower.com Pb Free Product NCE0224KA NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0224KA uses advanced trench technol

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http://www.ncepower.com Pb Free Product NCE0224F NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0224F uses advanced trench technolog

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK224 RF AMPLIFIER FOR UHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEA

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IRFR224B / IRFU224B November 2001 IRFR224B / IRFU224B 250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect

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MAX220–MAX249 +5V-Powered, Multichannel RS-232 Drivers/Receivers General Description The MAX220–MAX249 family of line drivers/receivers is intended

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IRFM224B November 2001 IRFM224B 250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produc

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S amHop Microelectronics C orp. S T U/D2240NL Nov 22,2004 N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S www.Data

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XP224N0601TR-G N-channel MOSFET 20V, 0.6A ETR11072-001a ■FEATURES On-State Resistance Driving voltage Environmentally Friendly : RDS(on)＝0.7Ω@VGS =

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XP224N06013R-G N-channel MOSFET 20V, 0.6A ■FEATURES On-State Resistance Driving voltage Environmentally Friendly : RDS(on)＝0.7Ω@VGS =4.5V : 1.8V :

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Features • Atmel® maXTouch™ Touchscreen – True 12-bit multiple touch with independent XY tracking for up to 10 concurrent touches in real time with to

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VBHA2245N P-Channel 20 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.450 at VGS = -4.5 V -20 0.500 at VGS = -2.5 V 0.60

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