224-channel Datasheet | Specifications & PDF Download

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3224 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3224 2SK3224-Z P

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PS224C Version : A.005 Issue Date : 2009/07/31 File Name : SP-PS224C-A.005.doc Total Pages : 11 4-Channel Secondary Monitoring IC 9 7 1 SILI

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IRFR224B / IRFU224B November 2001 IRFR224B / IRFU224B 250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect

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WTK4224 Surface Mount Dual N-Channel Enhancement Mode MOSFET P b Lead(Pb)-Free DRAIN CURRENT 10 AMPERES DRAIN SOURCE VOLTAGE 30 VOLTAGE D1 S1 G1 S2 G2

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PS224 Version Issue Date File Name Total Pages : A.004 : 2005/08/19 : SP-PS224-A.004.doc : 11 4-Channel Secondary Monitoring IC Free Datasheet http:

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Features • Atmel® maXTouch™ Touchscreen – True 12-bit multiple touch with independent XY tracking for up to 10 concurrent touches in real time with to

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VBHA2245N P-Channel 20 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.450 at VGS = -4.5 V -20 0.500 at VGS = -2.5 V 0.60

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2SK2248-01L,S F-III Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance N-channel

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PS224A1 Version : A.002 Issue Date : 2009/05/19 File Name : SP-PS224A1-A.002.doc Total Pages : 10 4-Channel Secondary Monitoring IC 9 7 1 SI

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http://www.ncepower.com Pb Free Product NCE0224K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0224K uses advanced trench technolog

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AON6224A 100V N-Channel AlphaSGT TM General Description • Trench Power AlphaSGTTM technology • Low RDS(ON) • Logicl Level Driving • Excellent Gate Ch

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2SK2224-01R FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarant

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2SK2249-01L,S F-III Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance N-channel

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF224 DESCRIPTION ·Drain Current ID=3.8A@ TC=25℃ ·Drain Source Vol

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NEW PRODUCT DMP2240UWQ P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary V(BR)DSS -20V RDS(ON) max 150mΩ @ VGS = -4.5V 200mΩ @ VG

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isc N-Channel MOSFET Transistor 2SK1224 DESCRIPTION ·Drain Current –ID=4A@ TC=25℃ ·Drain Source Voltage- : VDSS=800V(Min) ·Minimum Lot-to-Lot variat

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VN2224 N-Channel Enhancement-Mode Vertical DMOS FET Features • Free from Secondary Breakdown • Low Power Drive Requirement • Ease of Paralleling • L

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AON6224 100V N-Channel MOSFET General Description • Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-switching

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2SK2247 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current

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2SK2248-01L,S F-III Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance N-channel

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