22N65 Datasheet | Specifications & PDF Download

www.vishay.com SiHF22N65E Vishay Siliconix E Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. at 25 °C (Ω) Qg max. (nC) Qgs (nC

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X2-Class HiperFETTM Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode IXFP22N65X2M D G S VDSS = ID25 =  RDS(on) 650V 22A 145m

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SW22N65D N-channel Enhanced mode TO-247 MOSFET Features TO-247  High ruggedness  Low RDS(ON) (Typ 0.22Ω)@VGS=10V  Low Gate Charge (Typ 123nC) 

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UNISONIC TECHNOLOGIES CO., LTD 22N65 22A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION As the SMPS MOSFET, the UTC 22N65 uses UTC’s advanced technology t

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IXFP22N65X2M ·FEATURES ·With low gate drive requirements ·Easy to drive ·100% avalanche teste

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isc N-Channel MOSFET Transistor SiHF22N65E ·FEATURES ·With TO-220F packaging ·High speed switching ·Low gate input resistance ·100% avalanche tested

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IXFA22N65X2 IIXFA22N65X2 ·DESCRIPTION ·Drain Current : ID= 22A@ TC=25℃ ·Drain Source Voltage

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IXFP22N65X2 ·FEATURES ·With low gate drive requirements ·Easy to drive ·100% avalanche tested

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IXFH22N65X2 ·FEATURES ·With low gate drive requirements ·Easy to drive ·100% avalanche tested

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www.vishay.com SiHB22N65E Vishay Siliconix E Series Power MOSFET D D2PAK (TO-263) GD S PRODUCT SUMMARY VDS (V) RDS(on) max. (Ω) at VGS = 10 V Qg t

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X2-Class HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXFA22N65X2 IXFP22N65X2 IXFH22N65X2 Symbol VDSS VDGR VGSS VGSM ID25 IDM

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X2-Class HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXFA22N65X2 IXFP22N65X2 IXFH22N65X2 Symbol VDSS VDGR VGSS VGSM ID25 IDM

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Preliminary Data Sheet ICE22N65W ICE22N65W N-Channel Enhancement Mode MOSFET Features • TO247 package • Low rDS(on) • Ultra Low Gate Charge • High dv

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ICE22N65W N-Channel Enhancement Mode MOSFET Features: r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switchin

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IXFA22N65X2 IIXFA22N65X2 ·DESCRIPTION ·Drain Current : ID= 22A@ TC=25℃ ·Drain Source Voltage

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GENERAL DESCRIPTION GPT22N65 POWER FIELD EFFECT TRANSISTOR FEATURES This high voltage MOSFET uses an advanced termination scheme to provide enhanced

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STL22N65M5 Datasheet N-channel 650 V, 180 mΩ typ., 15 A, MDmesh M5 Power MOSFET in a PowerFLAT 8x8 HV package 5 432 1 PowerFLAT 8x8 HV Drain(5) G

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X2-Class HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXFA22N65X2 IXFP22N65X2 IXFH22N65X2 Symbol VDSS VDGR VGSS VGSM ID25 IDM

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