2302-RC Datasheet | Specifications & PDF Download

LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode MOSFET FEATURES ● RDS(ON)≦85mΩ@VGS=4.5V ● RDS(ON)≦115mΩ@VGS=2.5V ● RDS(ON)≦135mΩ@VGS=1.8V

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N-Channel Enhancement Mode Power MOSFET Description The MX2302A uses advanced trench technology to provide excellent RDS(ON), low gate charge and oper

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__~_--,- _ _-,-_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 470 OOcn3LJD Solid State Division Thyristors T2300 T2302 T2310 T2312 Series 2

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N-Channel Enhancement Mode Power MOSFET Description The PE2302A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It c

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LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode MOSFET ●APPLICATIONS 1)High Density Cell Design For Ultra Low On-Resistance Improved Shoot

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†RoHS COMPLIANT High Current Toroid Inductors Special Features • DC/DC converter, EMI filter applications • Low radiation • Low core loss • High curr

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ą TPIC2302 3ĆCHANNEL COMMONĆSOURCE POWER DMOS ARRAY ą SLIS028B − APRIL 1994 − REVISED SEPTEMBER 1995 • Low rDS(on) . . . 0.4 Ω Typ • High-Voltage Out

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StarChips Technology SCT2302 V01_01; Jul/12 2-Channel High Constant Driver with Supply Regulation Feedback Product Description The SCT2302 is a pat

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www.fairchildsemi.com TMC2302A Image Manipulation Sequencer 40 MHz Features • Asynchronous loading of control parameters • Rapid (25ns per pixel) rot

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Integrated Circuit Systems, Inc. ICS952302 Frequency Generator for Transmeta Efficeon Recommended Application: Transmeta Efficion, ATi M6 Output Fea

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LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode MOSFET FEATURES ● RDS(ON)≦85mΩ@VGS=4.5V ● RDS(ON)≦115mΩ@VGS=2.5V ● RDS(ON)≦135mΩ@VGS=1.8V

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FPF2300/02/03 — Dual-Output Current Limit Switch June 2009 FPF2300/02/03 Dual-Output Current Limit Switch Features 1.8 to 5.5V Input Voltage Range

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LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode MOSFET ●APPLICATIONS 1)High Density Cell Design For Ultra Low On-Resistance Improved Shoot

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