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Rev. 1.0, Nov. 2010 K8A56(57)ET(B)(Z)C 256Mb C-die NOR FLASH 16M x16, Synch Burst Multi Bank SLC NOR Flash datasheet SAMSUNG ELECTRONICS RESERVES TH

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KBE00S003M-D411 MCP MEMORY MCP Specification 1Gb NAND*2 + 256Mb Mobile SDRAM*2 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PROD

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www.DataSheet4U.com 256Mb DDR SDRAM Specification A2S56D20CTP A2S56D30CTP A2S56D40CTP Powerchip Semiconductor Corp. No.12, Li-Hsin Rd.1, Science-bas

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www.DataSheet4U.com 256Mb DDR SDRAM Specification A2S56D20CTP A2S56D30CTP A2S56D40CTP Powerchip Semiconductor Corp. No.12, Li-Hsin Rd.1, Science-bas

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www.DataSheet4U.com 256Mb Synchronous DRAM based on 4M x 4Bank x16 I/O 256M (16Mx16bit) Hynix SDRAM Memory Memory Cell Array - Organized as 4banks

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SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM 256Mb E-die SDRAM Specification Revision 1.3 September. 2003 * Samsung Electronics reserves the right t

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ELECTRONICS March. 2003 San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799 512Mb/256Mb

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MOSEL VITELIC V436632Y24V 256MB 144-PIN UNBUFFERED SDRAM SODIMM, 32M X 64 3.3VOLT PRELIMINARY Features ■ JEDEC-standard 144 pin, Small-Outline, Dua

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MOSEL VITELIC V54C3256(16/80/40)4V(T/S/B) 256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 PRELIMINARY 6 System

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K4J55323QF-GC 256M GDDR3 SDRAM 256Mbit GDDR3 SDRAM 2M x 32Bit x 4 Banks Graphic Double Data Rate 3 Synchronous DRAM with Uni-directional Data Strobe

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www.DataSheet4U.com K8F56(57)15ET(B)M NOR FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO S

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48SD1616 256 Mb SDRAM www.DataSheet4U.com 4-Meg X 16-Bit X 4-Banks Logic Diagram (One Amplifier) Memory FEATURES: • 256 Megabit ( 4-Meg X 16-Bit X

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www.DataSheet4U.com 256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O 256M (32Mx8bit) Hynix SDRAM Memory Memory Cell Array - Organized as 4banks of

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Rev. 1.3, May. 2010 K8P5516UZB 256Mb B-die NOR FLASH 56TSOP, 64FBGA, Page Mode 2.7V ~ 3.6V http://www.DataSheet4U.net/ datasheet SAMSUNG ELECTRONIC

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www.DataSheet4U.com 256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O 256M (32Mx8bit) Hynix SDRAM Memory Memory Cell Array - Organized as 4banks of

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256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O 256M (32Mx8bit) Hynix SDRAM Memory Memory Cell Array - Organized as 4banks of 8,388,608 x 8 This

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256Mbit MOBILE DDR SDRAM based on 4M x 4Bank x16 I/O Specification of 256Mb (16Mx16bit) Mobile DDR SDRAM Memory Cell Array - Organized as 4banks of

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256Mbit MOBILE DDR SDRAM based on 4M x 4Bank x16 I/O Specification of 256Mb (16Mx16bit) Mobile DDR SDRAM Memory Cell Array - Organized as 4banks of

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S70GL02GS 2 Gbit (256 MB) GL-S MIRRORBIT™ Flash Parallel, 3.0 V General description The S70GL02GS 2-Gb MIRRORBIT™ flash memory device is fabricated o

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S26KL512S, S26KS512S, S26KL256S, S26KS256S, S26KL128S, S26KS128S 512 Mb (64 MB)/256 Mb (32 MB)/ 128 Mb (16 MB) HYPERFLASH™ family HYPERBUS™, 3.0 V/1.8

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