27N10 Datasheet | Specifications & PDF Download

() CRSQ027N10NZ SkyMOS1 N-MOSFET 100V, 2.4mΩ, 240A Features • Uses CRM(CQ) advanced SkyMOS1 technology • Extremely low on-resistance RDS(on) • Excel

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DATA SHEET www.onsemi.com MOSFET - Power, Dual N-Channel 100 V, 26 mW, 28 A NVMFD027N10MCL Features • Small Footprint (5x6 mm) for Compact Design •

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MOSFET – Power, Single N-Channel 100 V, 26 mW, 28 A NVMFS027N10MCL Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize C

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MOSFET - Power, Single N-Channel 100 V, 26 mW, 28 A NVTFS027N10MCL Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Min

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 27N10 ·FEATURES ·Drain Current ID= 27A@ TC=25℃ ·Drain Source Voltag

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() CRSQ027N10N SkyMOS1 N-MOSFET 100V, 2.6mΩ, 240A Features • Uses CRM(CQ) advanced SkyMOS1 technology • Extremely low on-resistance RDS(on) • Excell

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP27N10E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTP27N

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Isc N-Channel MOSFET Transistor IPB027N10N5 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance

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BTD1RVFLT27N102 Si Capacitor Size Capacitance Rated Voltage 0.4 x 0.2 mm 1000 pF 3.6 V ●Outline ●Features High reliability Low profile (180μm)

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ISC027N10NM6 MOSFET OptiMOSTM 6 Power-Transistor, 100 V Features • N-channel, normal level • Very low on-resistance RDS(on) • Excellent gate charge x

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IPB027N10N5 MOSFET OptiMOSª 5 Power-Transistor, 100 V Features • Ideal for high frequency switching and sync. rec. • Excellent gate charge x RDS(on)

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BSC027N10NS5 MOSFET OptiMOSTM Power-Transistor, 100 V Features • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Super

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IPB027N10N3 G %&$ #®3 Power-Transistor Features Q' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D5 3 81B75 HR 9H [Z# @B? 4E3 D ( &  Q. 5BI B5C9C

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Isc N-Channel MOSFET Transistor IPB027N10N3 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance

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IPB027N10N3 G %&$ #®3 Power-Transistor Features Q' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D5 3 81B75 HR 9H [Z# @B? 4E3 D ( &  Q. 5BI B5C9C

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