INCHANGE Semiconductor isc N-Channel MOSFET Transi.
ON Semiconductor
NVMFD027N10MCL - Dual N-Channel Power MOSFET
DATA SHEET www.onsemi.com MOSFET - Power, Dual N-Channel 100 V, 26 mW, 28 A NVMFD027N10MCL Features • Small Footprint (5x6 mm) for Compact Design • .
Inchange Semiconductor
27N10 - N-Channel MOSFET
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 27N10 ·FEATURES ·Drain Current ID= 27A@ TC=25℃ ·Drain Source Voltag.
Infineon
ISC027N10NM6 - MOSFET
ISC027N10NM6 MOSFET OptiMOSTM 6 Power-Transistor, 100 V Features • N-channel, normal level • Very low on-resistance RDS(on) • Excellent gate charge x.
Infineon
IPB027N10N5 - MOSFET
IPB027N10N5 MOSFET OptiMOSª 5 Power-Transistor, 100 V Features • Ideal for high frequency switching and sync. rec. • Excellent gate charge x RDS(on) .
INCHANGE
IPB027N10N5 - N-Channel MOSFET
Isc N-Channel MOSFET Transistor IPB027N10N5 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance .
Motorola
MTP27N10E - TMOS POWER FET 27 AMPERES 100 VOLTS RDS(on) = 0.07 OHM
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP27N10E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTP27N.
Infineon
IPB027N10N3 - Power-Transistor
IPB027N10N3 G %&$ #®3 Power-Transistor Features Q' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D5 3 81B75 HR 9H [Z# @B? 4E3 D ( & Q. 5BI B5C9C.
Infineon
IPB027N10N3G - Power-Transistor
IPB027N10N3 G %&$ #®3 Power-Transistor Features Q' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D5 3 81B75 HR 9H [Z# @B? 4E3 D ( & Q. 5BI B5C9C.
INCHANGE
IPB027N10N3 - N-Channel MOSFET
Isc N-Channel MOSFET Transistor IPB027N10N3 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance .
ON Semiconductor
NVMFS027N10MCL - N-Channel Power MOSFET
MOSFET – Power, Single N-Channel 100 V, 26 mW, 28 A NVMFS027N10MCL Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize C.
ROHM
BTD1RVFLT27N102 - Si Capacitor
BTD1RVFLT27N102 Si Capacitor Size Capacitance Rated Voltage 0.4 x 0.2 mm 1000 pF 3.6 V ●Outline ●Features High reliability Low profile (180μm).
CRM
CRSQ027N10N - N-MOSFET
() CRSQ027N10N SkyMOS1 N-MOSFET 100V, 2.6mΩ, 240A Features • Uses CRM(CQ) advanced SkyMOS1 technology • Extremely low on-resistance RDS(on) • Excell.
CR Micro
CRSQ027N10NZ - SkyMOS1 N-MOSFET
() CRSQ027N10NZ SkyMOS1 N-MOSFET 100V, 2.4mΩ, 240A Features • Uses CRM(CQ) advanced SkyMOS1 technology • Extremely low on-resistance RDS(on) • Excel.
ON Semiconductor
NVTFS027N10MCL - N-Channel Power MOSFET
MOSFET - Power, Single N-Channel 100 V, 26 mW, 28 A NVTFS027N10MCL Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Min.
