K4R571669D (Samsung semiconductor)
256/288Mbit RDRAM(D-die)
K4R571669D/K4R881869D
Direct RDRAM™
256/288Mbit RDRAM(D-die)
512K x 16/18bit x 32s banks Direct RDRAMTM
Version 1.4 July 2002
Page -1
Version 1.
(2 views)
K4R881869M-NbCcG6 (Samsung semiconductor)
288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM
K4R881869M
Preliminary Direct RDRAM™
288Mbit RDRAM
512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM
Revision 0.9 January 2000
Page -1
Rev. 0.9
(2 views)
K4C89183AF (Samsung semiconductor)
288Mb x18 Network-DRAM2 Specification
www.DataSheet4U.com
K4C89183AF
288Mb x18 Network-DRAM2 Specification Version 0.7
- 1 -
REV. 0.7 Jan. 2005
K4C89183AF
Revision History
Version 0.0
(2 views)
K4R881869 (Samsung semiconductor)
288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM
K4R881869M
Preliminary Direct RDRAM™
288Mbit RDRAM
512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM
Revision 0.9 January 2000
Page -1
Rev. 0.9
(1 views)
K4R881869D (Samsung semiconductor)
256/288Mbit RDRAM(D-die)
K4R571669D/K4R881869D
Direct RDRAM™
256/288Mbit RDRAM(D-die)
512K x 16/18bit x 32s banks Direct RDRAMTM
Version 1.4 July 2002
Page -1
Version 1.
(1 views)
K4R881869M (Samsung semiconductor)
288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM
K4R881869M
Preliminary Direct RDRAM™
288Mbit RDRAM
512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM
Revision 0.9 January 2000
Page -1
Rev. 0.9
(1 views)
K4R881869M-NCK7 (Samsung semiconductor)
288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM
K4R881869M
Preliminary Direct RDRAM™
288Mbit RDRAM
512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM
Revision 0.9 January 2000
Page -1
Rev. 0.9
(1 views)
K4R881869M-NCK8 (Samsung semiconductor)
288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM
K4R881869M
Preliminary Direct RDRAM™
288Mbit RDRAM
512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM
Revision 0.9 January 2000
Page -1
Rev. 0.9
(1 views)
GS82582QT38GE (GSI Technology)
288Mb SigmaQuad-II+ SRAM
GS82582QT20/38GE-500/450/400/375
165-Bump BGA Commercial Temp Industrial Temp
288Mb SigmaQuad-II+TM Burst of 2 SRAM
500 MHz–375 MHz 1.8 V VDD
1.8 V
(1 views)
GS82582QT20GE (GSI Technology)
288Mb SigmaQuad-II+ SRAM
GS82582QT20/38GE-500/450/400/375
165-Bump BGA Commercial Temp Industrial Temp
288Mb SigmaQuad-II+TM Burst of 2 SRAM
500 MHz–375 MHz 1.8 V VDD
1.8 V
(1 views)
EM47EM3288MBA (Eorex)
4Gb Double DATA RATE-3 SDRAM
EM47EM3288MBA
8Gb (32M×8Bank×32) Double DATA RATE 3 Stack SDRAM
Features
• VDD/VDDQ = 1.35V -0.065/+0.1V. • Backward compatible to VDD = VDDQ = 1.5V
(1 views)
GS82583ET18GK (GSI Technology)
288Mb SigmaDDR-IIIe SRAM
GS82583ET18/36GK-675/625/550/500
260-Pin BGA Commercial Temp Industrial Temp
288Mb SigmaDDR-IIIe™ Burst of 2 SRAM
Up to 675 MHz 1.3V VDD
1.2V, 1.3V
(1 views)
GS82583ET36GK (GSI Technology)
288Mb SigmaDDR-IIIe SRAM
GS82583ET18/36GK-675/625/550/500
260-Pin BGA Commercial Temp Industrial Temp
288Mb SigmaDDR-IIIe™ Burst of 2 SRAM
Up to 675 MHz 1.3V VDD
1.2V, 1.3V
(1 views)
K4C89083AF (Samsung semiconductor)
288Mb x18 Network-DRAM2 Specification
www.DataSheet4U.com
K4C89183AF
288Mb x18 Network-DRAM2 Specification Version 0.7
- 1 -
REV. 0.7 Jan. 2005
K4C89183AF
Revision History
Version 0.0
(1 views)
K4C89093AF (Samsung semiconductor)
288Mb x18 Network-DRAM2 Specification
www.DataSheet4U.com
K4C89183AF
288Mb x18 Network-DRAM2 Specification Version 0.7
- 1 -
REV. 0.7 Jan. 2005
K4C89183AF
Revision History
Version 0.0
(1 views)
K4C89163AF (Samsung semiconductor)
288Mb x18 Network-DRAM2 Specification
www.DataSheet4U.com
K4C89183AF
288Mb x18 Network-DRAM2 Specification Version 0.7
- 1 -
REV. 0.7 Jan. 2005
K4C89183AF
Revision History
Version 0.0
(1 views)
IS49NLC36800 (Integrated Silicon Solution)
288Mb Common I/O RLDRAM 2 Memory
IS49NLC93200,IS49NLC18160,IS49NLC36800
288Mb (x9, x18, x36) Common I/O RLDRAM 2 Memory
JANUARY 2020
FEATURES
400MHz DDR operation (800Mb/s/pin d
(1 views)
IS49NLC18160 (Integrated Silicon Solution)
288Mb Common I/O RLDRAM 2 Memory
IS49NLC93200,IS49NLC18160,IS49NLC36800
288Mb (x9, x18, x36) Common I/O RLDRAM 2 Memory
JANUARY 2020
FEATURES
400MHz DDR operation (800Mb/s/pin d
(1 views)
IS49NLC93200 (Integrated Silicon Solution)
288Mb Common I/O RLDRAM 2 Memory
IS49NLC93200,IS49NLC18160,IS49NLC36800
288Mb (x9, x18, x36) Common I/O RLDRAM 2 Memory
JANUARY 2020
FEATURES
400MHz DDR operation (800Mb/s/pin d
(1 views)
GS82582D20GE (GSI Technology)
288Mb SigmaQuad-II+ SRAM
165-Bump BGA Commercial Temp Industrial Temp
GS82582D20/38GE-550/500/450/400
288Mb SigmaQuad-II+ Burst of 4 SRAM
550 MHz–400 MHz 1.8 V VDD
1.8 V or
(1 views)