28F256 Datasheet | Specifications & PDF Download

Ver 1.2 Radiation-Hardened SRAM Datasheet Part Number：B28F256LVRH Version No. 1.0 1.1 1.2 Publish Time 11.20.2015 09.25.2016 03.06.2018 Page of Rev

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Numonyx™ StrataFlash® Embedded Memory (J3-65nm) 256-Mbit Datasheet Product Features „ Architecture — Multi-Level Cell Technology: Highest Density at

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FINAL Am28F256 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS s High performance — 70 ns maximum acce

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FINAL Am28F256 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS s High performance — 70 ns maximum acce

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( DataSheet : www.DataSheet4U.com ) Intel StrataFlash® Embedded Memory (P30) 1-Gbit P30 Family Datasheet Product Features ■ High performance ■ Secu

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Intel StrataFlash® Wireless Memory (L18) 28F640L18, 28F128L18, 28F256L18 Datasheet Product Features High performance Read-While-Write/Erase — 85 ns

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Intel StrataFlash® Memory (J3) 256-Mbit (x8/x16) Product Features Datasheet ■ Performance ■ Architecture — 110/115/120/150 ns Initial Access Speed

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256Mb and 512Mb (256Mb/256Mb), P33-65nm Features Micron Parallel NOR Flash Embedded Memory (P33-65nm) RC28F256P33TFE, RC28F256P33BFE, RC28F256P33BFF,

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( DataSheet : www.DataSheet4U.com ) Intel StrataFlash® Memory (J3) 256-Mbit (x8/x16) Datasheet Product Features ■ ■ ■ Performance — 110/115/120/

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Standard Products www.DataSheet4U.com UT28F256 Radiation-Hardened 32K x 8 PROM Data Sheet December 2002 FEATURES q Programmable, read-only, asynchro

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Standard Products UT28F256LV Radiation-Hardened 32K x 8 PROM Data Sheet December, 2002 FEATURES q Programmable, read-only, asynchronous, radiationhar

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Intel StrataFlash® Memory (J3) 256-Mbit (x8/x16) Product Features Datasheet ■ Performance ■ Architecture — 110/115/120/150 ns Initial Access Speed

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Intel StrataFlash® Memory (J3) 256-Mbit (x8/x16) Product Features Datasheet ■ Performance ■ Architecture — 110/115/120/150 ns Initial Access Speed

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Intel StrataFlash® Memory (J3) 256-Mbit (x8/x16) Product Features Datasheet ■ Performance ■ Architecture — 110/115/120/150 ns Initial Access Speed

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FINAL Am28F256A 256 Kilobit (32,768 x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms Advanced Micro Devices DISTINCTIVE CHA

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Ver 1.2 Radiation-Hardened SRAM Datasheet Part Number：B28F256RH Version No. 1.0  1.1  1.2    Publish Time 2017.1  2018.7  2018.10    Page of Revise

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FINAL Am28F256 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS s High performance — 70 ns maximum acc

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256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash Features Parallel NOR Flash Embedded Memory JS28F256M29EWxx, PC28F256M29EWxx, RC28F256M29EWxx J

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M28F256 256 Kbit (32Kb x8, Bulk) Flash Memory 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 90ns BYTE PROGRAMING TIME: 10µs typic

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