28N50F Datasheet | Specifications & PDF Download

AP28N50FIP 500V N-Channel Enhancement Mode MOSFET Description The AP28N50F/P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned

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Advance Technical Information HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic

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Advance Technical Information HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic

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FDA28N50F — N-Channel UniFETTM FRFET® MOSFET FDA28N50F N-Channel UniFETTM FRFET® MOSFET 500 V, 28 A, 175 mΩ May 2014 Features • RDS(on) = 140 mΩ (T

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FQA28N50F September 2001 FRFET FQA28N50F 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors a

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FDA28N50F N-Channel MOSFET January 2012 FDA28N50F N-Channel MOSFET 500V, 28A, 0.175Ω Features • RDS(on) = 0.140Ω ( Typ.)@ VGS = 10V, ID = 14A • Low

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-3P packaging ·High speed switching ·Standard level gate drive ·Easy to use ·100% avalanche tested

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