2955-2 Datasheet | Specifications & PDF Download

2N3055, MJ2955 Complementary Power Transistors Designed for use in general-purpose amplifier and switching applications. Features: • Power dissipation

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www.DataSheet4U.com NTD2955 Power MOSFET −60 V, −12 A, P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and com

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NTF2955, NVF2955 MOSFET – Power, Single, P-Channel, SOT-223 -60 V, -2.6 A Features • Design for low RDS(on) • Withstands High Energy in Avalanche an

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TIP2955 TIP3055 Complementary power transistors Features ■ Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Application

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NTF2955, NVF2955, NVF2955P Power MOSFET Features −60 V, −2.6 A, Single P−Channel SOT−223 • • • • • • • • Design for low RDS(on) Withstands High Energ

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP2955E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTP2955

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SavantIC Semiconductor Silicon PNP Power Transistors Product Specification MJE2955T DESCRIPTION ·With TO-220 package ·Complement to type MJE3055T ·D

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NTP2955 MOSFET – Power, Single, P-Channel, TO-220 -60 V, -12 A Features • Low RDS(on) • Rugged Performance • Fast Switching • These are Pb−Free Devi

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NDT2955-VB NDT2955-VB Datasheet P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () - 60 0.055 at VGS = - 10 V 0.065 at VGS = - 4.5

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NTE2955 MOSFET N−Channel, Enhancement Mode High Speed Switch Application: D CS Switch for CRT Display Monitor Absolute Maximum Ratings: (TC = +25°C

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NTF2955, NVF2955 MOSFET – Power, Single, P-Channel, SOT-223 -60 V, -2.6 A Features • Design for low RDS(on) • Withstands High Energy in Avalanche an

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P-Channel Enhancement Mode Field Effect Transistor NDT2955 General Description This 60 V P−Channel MOSFET is produced using onsemi’s high voltage Tre

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FEATURES n Automatic Turn-On Via Voltage Monitor Input n Wide Input Supply Range: 1.5V to 36V n Low Supply Current: 1.2μA n ±25kV ESD HBM on PB Input

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isc Silicon PNP Power Transistor MJE2955T DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -60V(Min) ·High DC Current Gain- : hFE= 20-

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NT2955G P-Channel 60-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 60 0.061 at V GS = - 10 V 0.072 at VGS = - 4.5 V ID

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MJE2955T ® MJE3055T COMPLEMENTARY SILICON POWER TRANSISTORS s STMicroelectronics PREFERRED SALESTYPES s COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION

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September 1996 NDT2955 P-Channel Enhancement Mode Field Effect Transistor General Description Power SOT P-Channel enhancement mode power field effect

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