2955-2 Datasheet | Specifications & PDF Download

2N3055, MJ2955 Complementary Power Transistors Designed for use in general-purpose amplifier and switching applications. Features: • Power dissipation

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TIP2955 TIP3055 Complementary power transistors Features ■ Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Application

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SEMICONDUCTORS PNP TIP2955 NPN TIP3055 SILICON POWER TRANSISTORS The TIP3055 is a NPN epitaxial-base transistor in TO3PN package.It is intended for p

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isc Silicon PNP Power Transistors DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE=20-70@IC= -4A ·Collector-Emitter Saturation Volta

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www.DataSheet4U.com NTD2955 Power MOSFET −60 V, −12 A, P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and com

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TPT29555 I2C to 16-bit GPIO Expander with Interrupt Features  I2C-bus to 16-bit GPIO expander  Operating power supply voltage from 1.65 V to 5.5 V

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isc Silicon PNP Power Transistors DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE=20-70@IC= -4A ·Collector-Emitter Saturation Volt

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NDT2955-VB NDT2955-VB Datasheet P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () - 60 0.055 at VGS = - 10 V 0.065 at VGS = - 4.5

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TPT29555A I2C to 16-Bit GPIO Expander with Interrupt Features Description • I2C-Bus to 16-Bit GPIO Expander • Operating Power Supply Voltage from 1

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MJE2955T ® MJE3055T COMPLEMENTARY SILICON POWER TRANSISTORS s STMicroelectronics PREFERRED SALESTYPES s COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION

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P-Channel Enhancement Mode Field Effect Transistor NDT2955 General Description This 60 V P−Channel MOSFET is produced using onsemi’s high voltage Tre

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INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification KTB2955 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)C

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UNISONIC TECHNOLOGIES CO., LTD 2N2955 PNP SILICON TRANSISTOR SILICON PNP TRANSISTORS  DESCRIPTION The UTC 2N2955 is a silicon PNP transistor in T

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High Reliability SP5T RF Switch 50MHz to 8000MHz F2955 Datasheet Description The F2955 is a high reliability, low insertion loss, 50Ω SP5T absorptiv

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September 1996 NDT2955 P-Channel Enhancement Mode Field Effect Transistor General Description Power SOT P-Channel enhancement mode power field effect

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MJD2955 ® MJD3055 COMPLEMENTARY POWER TRANSISTORS s STMicroelectronics PREFERRED SALESTYPES s SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE &

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MJE2955T, 3055T Complementary Power Transistors Complementary Silicon Power Transistors are designed for use in general-purpose amplifier and switchin

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MJE2955T MJE2955T General Purpose and Switching Applications • DC Current Gain Specified to IC = 10 A • High Current Gain Bandwidth Product : fT = 2M

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