2955-2 Datasheet | Specifications & PDF Download

2N3055, MJ2955 Complementary Power Transistors Designed for use in general-purpose amplifier and switching applications. Features: • Power dissipation

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MJE2955T ® MJE3055T COMPLEMENTARY SILICON POWER TRANSISTORS s STMicroelectronics PREFERRED SALESTYPES s COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION

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www.DataSheet4U.com NTD2955 Power MOSFET −60 V, −12 A, P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and com

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NT2955G P-Channel 60-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 60 0.061 at V GS = - 10 V 0.072 at VGS = - 4.5 V ID

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isc Silicon PNP Power Transistors DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE=20-70@IC= -4A ·Collector-Emitter Saturation Volta

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TAB 1 2 TO-3 Figure 1. Internal schematic diagram 2N3055, MJ2955 Complementary power transistors Datasheet - production data Features • Low collector

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP2955E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTP2955

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September 1996 NDT2955 P-Channel Enhancement Mode Field Effect Transistor General Description Power SOT P-Channel enhancement mode power field effect

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SEMICONDUCTORS PNP TIP2955 NPN TIP3055 SILICON POWER TRANSISTORS The TIP3055 is a NPN epitaxial-base transistor in TO3PN package.It is intended for p

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TIP2955 TIP3055 Complementary power transistors Features ■ Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Application

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isc Silicon PNP Power Transistor MJE2955T DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -60V(Min) ·High DC Current Gain- : hFE= 20-

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NDT2955-VB NDT2955-VB Datasheet P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () - 60 0.055 at VGS = - 10 V 0.065 at VGS = - 4.5

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2N3055 NPN MJ2955 PNP COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3055 and

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RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION See Below for Part # TO-220 - Power Transistors and Darlingtons TO-220 4 12 3 Pin Config 1. Base 2.

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FEATURES n Automatic Turn-On Via Voltage Monitor Input n Wide Input Supply Range: 1.5V to 36V n Low Supply Current: 1.2μA n ±25kV ESD HBM on PB Input

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2N3055(NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors Complementary silicon power transistors are designed for general−pur

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