2N707 Datasheet | Specifications & PDF Download

N-Channel Enhancement-Mode Transistor Product Summary V(BR)DSS (V) 500 rDS(on) (W) 0.40 ID (A) 13 TO-254AA D Hermetic Package 2N7078 G Case

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TEMIC Siliconix N-Channel Enhancement-Mode Thansistor 2N7075 Product Summary Vns(V) 100 rnS(on) (Q) 0.065 In (A) 30 TO·254AA Hermetic Package o

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N-CHANNEL ENHANCEMENT-MODE POWER MOSFET 2N7077 • VDSS = 400V, ID(CONT) = 15A, RDS(on) = 300mΩ • Hermetic Isolated Metal TO-254AA Package • Inte

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isc N-Channel MOSFET Transistor 2N7076 DESCRIPTION ·Drain Current –ID=28A@ TC=25℃ ·Drain Source Voltage- : VDSS=200V(Min) ·Minimum Lot-to-Lot variat

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N-Channel Enhancement-Mode Transistor Product Summary V(BR)DSS (V) 200 rDS(on) (W) 0.10 ID (A) 28 TO-254AA D Hermetic Package 2N7076 G Case

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TEMIC Siliconix N-Channel Enhancement-Mode Transistor 2N7077 Product Summary V(BR)nSS (V) 400 rnS(on) (Q) 0.30 In (A) 15 TO-254AA Hermetic Packa

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P-Channel Enhancement-Mode Transistor Product Summary V(BR)DSS (V) –100 rDS(on) (W) 0.210 ID (A) –17 TO-254AA S Hermetic Package 2N7079 G Ca

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A 2N707, (SILICON) CASE 22 (TO-18) Collector connected to case MAXIMUM RATINGS NPN silicon epitaxial mesa transistors for VHF oscillator and class C

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A 2N707, (SILICON) CASE 22 (TO-18) Collector connected to case MAXIMUM RATINGS NPN silicon epitaxial mesa transistors for VHF oscillator and class C

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