2SA1015-O Datasheet | Specifications & PDF Download

UNISONIC TECHNOLOGIES CO., LTD 2SA1015 PNP SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR  FEATURES * Collector-Emitter Voltage: BVCEO

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DC COMPONENTS CO., LTD. R DISCRETE SEMICONDUCTORS 2SA1015 TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for use

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TIGER ELECTRONIC CO.,LTD 2SA1015 PNP EPITAXIAL PLANAR TRANSISTOR Description The 2SA1015 is designed for use in driver stage of AF amplifier and gen

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2SA1015(L) TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1015(L) Audio Frequency Amplifier Applications Low Noise Amplifier Applica

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Silicon Epitaxial Planar Transistor FEATURES z Complementary To 2SC1815. z Excellent HFE Linearity. Pb Lead-free z High voltage and high current.

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2SA1015 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 PNP 。Silicon PNP transistor in a TO-92 Plastic Package.  / Features ,, hFE ,, 2SC1815

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2SA1015M Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-23 PNP 。Silicon PNP transistor in a SOT-23 Plastic Package. / Features ,, hFE ,, 2SC181

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MCC TM Micro Commercial Components
     omponents 20736 Marilla Street Chatsworth  # $ % #

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MCC TM Micro Commercial Components
     omponents 20736 Marilla Street Chatsworth  # $ % #

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MCC TM Micro Commercial Components
     omponents 20736 Marilla Street Chatsworth  # $ % #

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www.DataSheet4U.com ST 2SA1015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided int

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2SA1015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, O, Y and

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` isc Silicon PNP Transistor DESCRIPTION ·High Voltage and High Current Vceo=-50V(Min.），Ic=-150mA(Max) ·Excellent hFE Linearity ·Low Noise ·Complemen

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2SA1015(L) TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1015(L) Audio Frequency Amplifier Applications Low Noise Amplifier Applica

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SMD Type TransistIoCrs PNP Transistor 2SA1015 Features High voltage and high current VCEO:=-50V(min.),IC=-150mA(max.) Low niose: NF=1dB(Typ.) at f=1

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UTC 2SA1015 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR FEATURES *Collector-Emitter Voltage: BVCEO=-50V *Collector curre

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Elektronische Bauelemente 2SA1015K -0.15A, -50V PNP Plastic Encapsulate Transistor RoHS Compliant Product A suffix of “-C” specifies halogen and lea

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