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L2SB1197KQLT1G - Low Frequency Transistor PNP Silicon
LESHAN RADIO COMPANY, LTD. Low Frequency Transistor PNP Silicon L2SB1197K*LT1 FEATURE ƽHigh current capacity in compact package. IC = í0.8A. www.Da.L2SB1197KRLT1 - Low Frequency Transistor PNP Silicon
LESHAN RADIO COMPANY, LTD. Low Frequency Transistor PNP Silicon L2SB1197K*LT1 FEATURE ƽHigh current capacity in compact package. IC = í0.8A. www.Da.2SB1197 - PNP Transistor
2SB1197 PNP General Purpose Transistors P b Lead(Pb)-Free Features: * High current capacity in compact package. * Epitaxial planar type. * We declare.2SB1197 - Silicon Epitaxial Planar Transistor
Production specification Silicon Epitaxial Planar Transistor FEATURES z Small surface mounting type. z Corredtor peak current(Max.=1000mA). Pb Lead.2SB1197-P - PNP Transistor
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2SB1 1 97 TRANSISTOR(PNP) SOT-23 Unit : mm 1. BASE FEATURES z Low VCE(sat).VCE(sat)<-0.5V(IC / IB = -0.5A /-50mA) z IC =-0.8A. Complements the 2SD1.2SB1197KPT - PNP Switching Transistor
CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT PNP Switching Transistor VOLTAGE 32 Volts APPLICATION * Telephone and proferssional communction equipment. * .2SB1197KQLT1 - Low Frequency Transistor
WILLAS Low Frequency Transistor • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. FM1.2SB1197KRLT1 - Low Frequency Transistor
WILLAS Low Frequency Transistor • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. FM1.L2SB1197KQLT1 - Low Frequency Transistor PNP Silicon
LESHAN RADIO COMPANY, LTD. Low Frequency Transistor PNP Silicon L2SB1197K*LT1 FEATURE ƽHigh current capacity in compact package. IC = í0.8A. www.Da.L2SB1197KRLT1G - Low Frequency Transistor PNP Silicon
LESHAN RADIO COMPANY, LTD. Low Frequency Transistor PNP Silicon L2SB1197K*LT1 FEATURE ƽHigh current capacity in compact package. IC = í0.8A. www.Da.L2SB1197KQLT3G - Low Frequency Transistor
LESHAN RADIO COMPANY, LTD. Low Frequency Transistor L2SB1197KQLT1G Series PNP Silicon S-L2SB1197KQ LT1G Series FEATURE ƽHigh current capacity in .2SB1197 - PNP Transistor
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SB1197 TRANSISTOR (PNP) FEATURES z Low VCE(sat).VCE(sat)<-.2SB1197K - Transistor
2SB1197K Low Frequency Transistor (-32V, -0.8A) Parameter VCEO IC Value -32V -800mA lFeatures 1) Low VCE(sat). VCE(sat)≦ -500mV ( IC= -500mA / I .2SB1197K - Silicon PNP transistor
2SB1197K Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-23 PNP 。Silicon PNP transistor in a SOT-23 Plastic Package. / Features , 2SD1781K 。 L.2SB1197 - PNP Transistor
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www.DataSheet4U.com MCC Micro Commercial Components TM omponents 20736 Marilla Street Chatsworth # $.2SB1197-R - PNP Transistor
www.DataSheet4U.com MCC Micro Commercial Components TM omponents 20736 Marilla Street Chatsworth # $.2SB1197K - PNP Transistor
www.DataSheet4U.com 2SB1197K PNP 3 2 1 SC-59 V CEO Value -32 -40 -5 -800 200 1.6 625 2SB1197K=AHR -1.0 -50 -50 -32 -40 -5.0 -0.5 -0.5 u u -20.2SB1197 - PNP Transistor
2SB1197 Elektronische Bauelemente -0.8 A, -40 V PNP Epitaxial Planar Transistor RoHS Compliant Product A suffix of “-C” specifies halogen and lead fr.