2SB1218 Datasheet | Specifications & PDF Download

Product specification 2SB1218 Features High forward current transfer ratio hFE. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Para

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Transistor 2SB1218A Silicon PNP epitaxial planer type For general amplification Complementary to 2SD1819A 2.1±0.1 Unit: mm s Features q q 0.425 1

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Transys Electronics L I M I T E D SOT-323 Plastic-Encapsulated Transistors SOT-323 2SB1218A FEATURES Power dissipation PCM: TRANSISTOR (PNP) 1. BAS

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BL Galaxy Electrical PNP Silicon Epitaxial Planar Transistor FEATURES z z z High forward current transfer ratio hFE Excellent HFE Linearity. Complemen

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2SB1 21 8 A TRANSISTOR(PNP) FEATURES  High DC Current Gain  Complementary to 2SD1819A APPLICATIONS  General Purpose Amplification MAXIMUM RATINGS (

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SMD Type Silicon PNP Epitaxial Planar Type 2SB1218 Transistors IC Features High forward current transfer ratio hFE. 1 Emitter 2 Base 3 Collector A

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2SB1218A Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-323 PNP 。Silicon PNP transistor in a SOT-323 Plastic Package.  / Features , 2SD1819A 。

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PNP Silicon Epitaxial Planar Transistor FEATURES  High forward current transfer ratio hFE  Excellent HFE Linearity.  Complements the 2SD1819A. Pb

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2SB1218A Elektronische Bauelemente -0.1A , -60V PNP Silicon Epitaxial Paner Transistors RoHS Compliant Product A suffix of “-C” specifies halogen & l

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