2SC607 Datasheet | Specifications & PDF Download

isc Silicon NPN Power Transistor 2SC6076 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) ·Low Collector-Emitter Saturation V

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www.DataSheet4U.com Ordering number : ENA0271 2SC6071 SANYO Semiconductors DATA SHEET 2SC6071 Applications • NPN Epitaxial Planar Silicon Transi

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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6076 Power Amplifier Applications Power Switching Applications 2SC6076 Unit: mm Low c

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2SC6078 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6078 ○ Power Amplifier Applications ○ Power Switching Applications • • Low col

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2SC6079 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6079 Power Amplifier Applications Power Switching Applications Low collector saturation volt

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2SC6072 TOSHIBA Multi-chip Device Silicon NPN Epitaxial Transistor Type 2SC6072 Power Amplifier Applications Driver Stage Amplifier Applications Unit

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2SC6077 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6077 ○ Power Amplifier Applications ○ Power Switching Applications • • Low col

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2SC6075 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6075 Power Amplifier Applications Power Switching Applications Low collector emitter saturat

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