Datasheet4U Logo Datasheet4U.com

2SC6076 Datasheet - Toshiba Semiconductor

Datasheet Details

Part number:

2SC6076

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

197.52 KB

Description:

Silicon NPN Transistor

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6076 Power Amplifier Applications Power Switching Applications 2SC6076 Unit: mm Low collector saturation voltage: VCE (sat) = 0.5 V (max) ( IC = 1A) High-speed switching: tstg = 0.4 μs (typ.) Absolute Maximum Ratings (Ta = 25°C) Char

2SC6076_ToshibaSemiconductor.pdf

Preview of 2SC6076 PDF
2SC6076 Datasheet Preview Page 2 2SC6076 Datasheet Preview Page 3

2SC6076, Silicon NPN Transistor

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6076 Power Amplifier Applications Power Switching Applications 2SC6076 Unit: mm Low collector saturation voltage: VCE (sat) = 0.5 V (max) ( IC = 1A) High-speed switching: tstg = 0.4 μs (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction te

2SC6076 Distributor

📁 Related Datasheet

📌 All Tags

Toshiba Semiconductor 2SC6076-like datasheet