2SC6076 Datasheet - Toshiba Semiconductor

2SC6076 Silicon NPN Transistor

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6076 Power Amplifier Applications Power Switching Applications 2SC6076 Unit: mm Low collector saturation voltage: VCE (sat) = 0.5 V (max) ( IC = 1A) High-speed switching: tstg = 0.4 μs (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction te.

2SC6076_ToshibaSemiconductor.pdf