Datasheet Specifications
- Part number
- 2SC6076
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 197.52 KB
- Datasheet
- 2SC6076_ToshibaSemiconductor.pdf
- Description
- Silicon NPN Transistor
Description
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6076 Power Amplifier Applications Power Switching Applications 2SC6076 Unit: mm Low c.
Applications
* Power Switching Applications 2SC6076 Unit: mm Low collector saturation voltage: VCE (sat) = 0.5 V (max) ( IC = 1A) High-speed switching: tstg = 0.4 μs (typ. ) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage Collector-emitter voltage Collector-emit2SC6076 Distributors
📁 Related Datasheet
📌 All Tags