Transistors 2SD227 Free Datasheet http://www.Data.
USHA
2SD227 - Transistors
Transistors 2SD227 Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com .
Toshiba Semiconductor
2SD2271 - Silicon NPN Transistor
2SD2271 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington Power Transistor) 2SD2271 Motor Drive Applications High-Current Switching App.
Panasonic Semiconductor
2SD2275 - Silicon NPN Transistor
Power Transistors 2SD2275 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1502 φ 3.3±0.2 5.0±0.3 3.0 .
Panasonic Semiconductor
D2276 - 2SD2276
Power Transistors 2SD2276 Silicon NPN triple diffusion planar type Darlington 2.0 4.0 2.0 3.0 For power amplification Complementary to 2SB1503 s Fea.
Panasonic Semiconductor
2SD2273 - Silicon NPN Transistor
Power Transistors 2SD2273 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1500 φ 3.3±0.2 5.0±0.3 3.0 .
Panasonic Semiconductor
2SD2276 - Silicon NPN Transistor
Power Transistors 2SD2276 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1503 φ 3.3±0.2 5.0±0.3 3.0 .
Toshiba Semiconductor
D2271 - 2SD2271
2SD2271 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington Power Transistor) 2SD2271 Motor Drive Applications High-Current Switching App.
INCHANGE
2SD2271 - Silicon NPN Darlington Power Transistor
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE= 500(Min)@ (VCE= 2V, IC= 5A) ·High Breakdown Voltage :VCEO(sus)=2.
INCHANGE
2SD2276 - NPN Transistor
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) ·High DC Current Gain- : hFE= 500.
INCHANGE
2SD2275 - NPN Transistor
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High DC Current Gain- : hFE= 500.
