| No |
Part Number |
Description |
Manufacture |
PDF |
| 3460 |
2SK0065 |
Silicon N-Channel Junction FET
Silicon Junction FETs (Small Signal)
2SK0065 (2SK65)
Silicon N-Channel Junction FET
For impedance conversion in low frequency For electret capacitor microphone
4.0±0.2 2.0±0.2 (0.8) 3.0±0.2
unit: |
Panasonic Semiconductor
|
|
| 3459 |
2SK0123 |
Silicon N-Channel Junction FET
Silicon Junction FETs (Small Signal)
2SK0123 (2SK123)
Silicon N-Channel Junction FET
For impedance conversion in low frequency For electret capacitor microphone s Features
q High mutual conductance g |
Panasonic Semiconductor
|
|
| 3458 |
2SK0198 |
Silicon N-Channel Junction FET
Silicon Junction FETs (Small Signal)
2SK0198 (2SK198)
Silicon N-Channel Junction FET
For low-frequency amplification
0.40+0.10 –0.05
Unit: mm
0.16+0.10 –0.06
s Features
q High mutual conductanc |
Panasonic Semiconductor
|
|
| 3457 |
2SK0301 |
Silicon N-Channel Junction FET
Silicon Junction FETs (Small Signal)
2SK0301 (2SK301)
Silicon N-Channel Junction FET
For low-frequency amplification For switching
5.0±0.2 5.1±0.2 4.0±0.2
unit: mm
I Features
13.5±0.5
G Low n |
Panasonic Semiconductor
|
|
| 3456 |
2SK0601 |
Silicon N-Channel MOS FET
Silicon MOS FETs (Small Signal)
2SK601
Silicon N-Channel MOS FET
For switching
unit: mm
s Features
q Low ON-resistance RDS(on) q High-speed switching q Allowing to be driven directly by CMOS and TTL |
Panasonic Semiconductor
|
|
| 3455 |
2SK0614 |
Silicon N-Channel MOS FET
Silicon MOS FETs (Small Signal)
2SK0614 (2SK614)
Silicon N-Channel MOS FET
For switching
unit: mm
I Features
5.0±0.2
4.0±0.2
0.7±0.1
0.7±0.2 12.9±0.5
G Low ON-resistance RDS(on) G High-spe |
Panasonic Semiconductor
|
|
| 3454 |
2SK0615 |
SILICON N-CHANNEL MOS FET
Silicon MOS FETs (Small Signal)
2SK0615 (2SK615)
Silicon N-Channel MOS FET
For switching
Unit: mm
I Features
2.0±0.2
G Low ON-resistance G High-speed switching G Allowing to be driven directly by |
Panasonic Semiconductor
|
|
| 3453 |
2SK0655 |
Silicon N-Channel MOS FET
Silicon MOS FETs (Small Signal)
2SK0655 (2SK655)
Silicon N-Channel MOS FET
unit: mm
For switching I Features
0.75 max.
4.0±0.2 (0.8) 3.0±0.2
2.0±0.2
I Absolute Maximum Ratings (Ta = 25°C)
Par |
Panasonic Semiconductor
|
|
| 3452 |
2SK0656 |
Silicon N-Channel MOS FET
Silicon MOS FETs (Small Signal)
2SK0656 (2SK656)
Silicon N-Channel MOS FET
For switching
4.0±0.2 2.0±0.2 (0.8) 3.0±0.2
unit: mm
I Features
I Absolute Maximum Ratings (Ta = 25°C)
Parameter Drai |
Panasonic Semiconductor
|
|
| 3451 |
2SK0657 |
Silicon N-Channel MOS FET
Silicon MOS FETs (Small Signal)
2SK0657 (2SK657)
Silicon N-Channel MOS FET
Unit: mm
For switching
6.9±0.1
(0.4)
2.5±0.1 (1.0)
(1.0) 3.5±0.1 2.0±0.2 2.4±0.2
(1.5) (1.5)
I Features
1.0±0.1
|
Panasonic Semiconductor
|
|
| 3450 |
2SK0662 |
Silicon N-Channel Junction FET
Silicon Junction FETs (Small Signal)
2SK0662 (2SK662)
Silicon N-Channel Junction FET
For low-frequency amplification
unit: mm
(0.425)
I Features
0.3+0.1 –0.0 3
0.15+0.10 –0.05
G High mutual c |
Panasonic Semiconductor
|
|
| 3449 |
2SK0663 |
Silicon N-Channel Junction FET
Silicon Junction FETs (Small Signal)
2SK0663 (2SK663)
Silicon N-Channel Junction FET
For low-frequency amplification For switching
0.3+0.1 –0.0
unit: mm
(0.425)
0.15+0.10 –0.05
I Features
3
( |
Panasonic Semiconductor
|
|
