2SK210 Datasheet | Specifications & PDF Download

2SK210 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK210 FM Tuner Applications VHF Band Amplifier Applications • • • High power

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www.DataSheet4U.com 2SK2101-01MR FAP-IIA Series N-channel MOS-FET 800V 2,1Ω 6A 50W > Features High Speed Switching Low On-Resistance No Secondar

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2SK2101-01MR FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guaran

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2SK210 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK210 FM Tuner Applications VHF Band Amplifier Applications • • • High power

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Ordering number:ENN4602A N-Channel Silicon MOSFET 2SK2108 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed swi

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isc N-Channel MOSFET Transistor 2SK2108 DESCRIPTION ·Drain Current –ID= 6A@ TC=25℃ ·Drain Source Voltage- : VDSS= 250V(Min) ·Fast Switching Speed ·M

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Transistors Small switching (30V, 2A) 2SK2103 FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Low-volt

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2109 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2109 is a N-channel MOS FET of a vertical type and

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