2SK315 Datasheet | Specifications & PDF Download

2SK3155 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 100 mΩ typ. • High speed switching • 4 V gate drive de

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2SK3150(L), 2SK3150(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-750A (Z) 2nd. Edition February 1999 Features • Low on-resistance

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2SK3150(L), 2SK3150(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-750A (Z) 2nd. Edition February 1999 Features • Low on-resistance

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2SK3151 Silicon N Channel MOS FET High Speed Power Switching ADE-208-747A (Z) 2nd. Edition February 1999 Features • Low on-resistance R DS (on) = 11.

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2SK3154 Silicon N Channel MOS FET High Speed Power Switching ADE-208-682A (Z) 2nd. Edition February 1999 Features • Low on-resistance R DS = 100 mΩ t

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2SK3150(L), 2SK3150(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-750A (Z) 2nd. Edition February 1999 Features • Low on-resistance

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2SK3155 Silicon N Channel MOS FET High Speed Power Switching ADE-208-768C (Z) 4th. Edition Februaty 1999 Features • Low on-resistance R DS = 100 mΩ t

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2SK3151 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS (on) = 11.5 mΩ typ. • High speed switching • 4 V gate dr

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2SK3157 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 50 mΩ typ. • High speed switching • 4 V gate drive dev

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Ordering number:EN1005B www.DataSheet4U.com N-Channel Junction Silicon FET 2SK315 FM Tuner Applications Features · Ideal for FM tuners in radios, s

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2SK3157 Silicon N Channel MOS FET High Speed Power Switching ADE-208-769A (Z) 2nd. Edition Februaty 1999 Features • Low on-resistance R DS = 50 mΩ ty

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2SK3150(L), 2SK3150(S) Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =45 mΩ typ. • High speed switching • 4 V

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2SK3152 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =100 mΩ typ. • High speed switching • 4 V gate drive dev

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2SK3152 Silicon N Channel MOS FET High Speed Power Switching ADE-208-732 (Z) 1st. Edition February 1999 Features • Low on-resistance R DS = 100 mΩ ty

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2SK3156 Silicon N Channel MOS FET High Speed Power Switching ADE-208-683A (Z) 2nd. Edition February 1999 Features • Low on-resistance R DS = 50 mΩ ty

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2SK3158 Silicon N Channel MOS FET High Speed Power Switching ADE-208-757A(Z) Target Specification 2nd. Edition December 1998 Features • Low on-resist

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2SK3150(L), 2SK3150(S) Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =45 mΩ typ. • High speed switching • 4 V

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2SK3158 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 40 mΩ typ. • High speed switching • 4 V gate drive dev

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isc N-Channel MOSFET Transistor ·FEATURES · Drain-source on-resistance: RDS(on) ≤ 130mΩ@10V ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot

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2SK3153 Silicon N Channel MOS FET High Speed Power Switching ADE-208-733A (Z) 2nd. Edition February 1999 Features • Low on-resistance R DS = 65 mΩ ty

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