2SK321 Datasheet | Specifications & PDF Download

2SK3211(L), 2SK3211(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-761A (Z) 2nd. Edition February 1999 Features • • • Low on-resista

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2SK3217-01MR N-CHANNEL SILICON POWER MOS-FET FUJI POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving po

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2SK3211(L), 2SK3211(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-761A (Z) 2nd. Edition February 1999 Features • • • Low on-resista

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2SK3212 Silicon N Channel MOS FET High Speed Power Switching ADE-208-752 (Z) 1st. Edition February 1999 Features • Low on-resistance R DS = 0.1 Ω typ

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2SK3211(L), 2SK3211(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-761A (Z) 2nd. Edition February 1999 Features • • • Low on-resista

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2SK3215 Silicon N Channel MOS FET High Speed Power Switching ADE-208-764(Z) Target Specification 1st. Edition December 1998 Features • Low on-resista

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2SK3211(L), 2SK3211(S) Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 60 mΩ typ. • High speed switching • 4 V

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2SK3219-01MR N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof

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2SK3211(L), 2SK3211(S) Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 60 mΩ typ. • High speed switching • 4 V

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2SK3211(L), 2SK3211(S) Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 60 mΩ typ. • High speed switching • 4 V

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2SK3212 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =0.1 Ω typ. • High speed switching • 4 V gate drive devi

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isc N-Channel MOSFET Transistor 2SK3218 FEATURES ·Drain Current : ID= 40A@ TC=25℃ ·Drain Source Voltage : VDSS= 150V(Min) ·Static Drain-Source On-Re

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2SK3216-01 N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FU

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2SK3218-01 N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FU

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2SK3214 Silicon N Channel MOS FET High Speed Power Switching ADE-208-763(Z) Target Specification 1st. Edition December 1998 Features • Low on-resista

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2SK3216-01 N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FU

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