.
Fuji Electric
K3216-01 - 2SK3216-01
2SK3216-01 N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FU.
Hitachi Semiconductor
2SK3211 - N-Channel MOSFET
2SK3211(L), 2SK3211(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-761A (Z) 2nd. Edition February 1999 Features • • • Low on-resista.
Fuji Electric
2SK3218-01 - N-Channel MOSFET
2SK3218-01 N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FU.
Renesas
2SK3211 - Silicon N-Channel MOSFET
2SK3211(L), 2SK3211(S) Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 60 mΩ typ. • High speed switching • 4 V.
Fuji
2SK3217-01MR - N-CHANNEL SILICON POWER MOS-FET
2SK3217-01MR N-CHANNEL SILICON POWER MOS-FET FUJI POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving po.
Hitachi Semiconductor
2SK3211S - N-Channel MOSFET
2SK3211(L), 2SK3211(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-761A (Z) 2nd. Edition February 1999 Features • • • Low on-resista.
Hitachi Semiconductor
2SK3215 - N-Channel MOSFET
2SK3215 Silicon N Channel MOS FET High Speed Power Switching ADE-208-764(Z) Target Specification 1st. Edition December 1998 Features • Low on-resista.
Fuji Electric
2SK3216-01 - N-Channel MOSFET
2SK3216-01 N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FU.
Renesas
2SK3211L - Silicon N-Channel MOSFET
2SK3211(L), 2SK3211(S) Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 60 mΩ typ. • High speed switching • 4 V.
Renesas
2SK3212 - Silicon N-Channel MOSFET
2SK3212 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =0.1 Ω typ. • High speed switching • 4 V gate drive devi.
Hitachi Semiconductor
2SK3211L - N-Channel MOSFET
2SK3211(L), 2SK3211(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-761A (Z) 2nd. Edition February 1999 Features • • • Low on-resista.
Hitachi Semiconductor
2SK3212 - N-Channel MOSFET
2SK3212 Silicon N Channel MOS FET High Speed Power Switching ADE-208-752 (Z) 1st. Edition February 1999 Features • Low on-resistance R DS = 0.1 Ω typ.
Hitachi Semiconductor
2SK3214 - N-Channel MOSFET
2SK3214 Silicon N Channel MOS FET High Speed Power Switching ADE-208-763(Z) Target Specification 1st. Edition December 1998 Features • Low on-resista.
Fuji Electric
2SK3219-01MR - N-Channel MOSFET
2SK3219-01MR N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof .
Renesas
2SK3211S - Silicon N-Channel MOSFET
2SK3211(L), 2SK3211(S) Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 60 mΩ typ. • High speed switching • 4 V.
Inchange Semiconductor
2SK3218 - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor 2SK3218 FEATURES ·Drain Current : ID= 40A@ TC=25℃ ·Drain Source Voltage : VDSS= 150V(Min) ·Static Drain-Source On-Re.
