3.0mT Datasheet | Specifications & PDF Download

Description V X / Mob:15919711751 ASC20N3300MT4 3300V N-Channel MOSFET Silicon Carbide (SiC) MOSFET use a completely new technology that provide su

(72 views)

V X / Mob:15919711751 ASC100N1200MT3 1200V N-Channel MOSFET Description Silicon Carbide (SiC) MOSFET use a completely new technology that provide s

(71 views)

Description V X / Mob:15919711751 ASC30N1200MT3 1200V N-Channel MOSFET Silicon Carbide (SiC) MOSFET use a completely new technology that provide su

(69 views)

Thyristor Three Quadrants operation: QI - QIII 1~ Triac Part number CMA60MT1600NHB CMA60MT1600NHB VRRM = I TAV = VT = 1600 V 30 A 1,35 V Three

(69 views)

Description V X / Mob:15919711751 ASC60N650MT3 650V N-Channel MOSFET Silicon Carbide (SiC) MOSFET use a completely new technology that provide supe

(64 views)

Thyristor Module 1~ Triac Part number MCMA650MT1400NKD MCMA650MT1400NKD VRRM = I TAV = VT = 1400 V 300 A 1,02 V Three Quadrants Operation Pos

(63 views)

Winstar Display Co., LTD WEB: https://www.winstar.com.tw E-mail: sales@winstar.com.tw SPECIFICATION MODULE NO.: WF70MTIBGDRGA# General Specificati

(40 views)

G3R30MT12K 1200 V 30 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode Features • G3R™ (3rd Generation) Technology • Low Temperature Coe

(23 views)

DReovcisNioon. . T1 D4-EA-01892 Product Standards MIP2M20MTSCF Type Silicon MOSFET type Integrated Circuit Application For Switching Power Supply

(22 views)

DReovcisNioon. . T1 D4-EA-01891 Product Standards MIP2L40MTSCF Type Application Structure Equivalent Circuit Out Line Silicon MOSFET type Integrate

(22 views)

www.DataSheet4U.com Bulletin I27129 rev. C 05/03 200MT40KB THREE PHASE BRIDGE Features Package fully compatible with the industry standard INT-Apak

(20 views)

MIP3550MTSCF Type Application Structure Equivalent Circuit Package Silicon MOSFET type Integrated Circuit For Switching Power Supply Control CMOS

(20 views)

G3R30MT12J 1200 V 30 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode Features • G3R™ (3rd Generation) Technology • Low Temperature Coe

(20 views)

G2R50MT33-CAL 3300 V 50 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode Features • Softer RDS(ON) v/s Temperature Dependency • LoRing™

(20 views)

G3R30MT12-CAL 1200 V 30 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode Features • G3R™ (3rd Generation) Technology • Softer RDS(ON) v

(20 views)

Bulletin I27501 rev. A 05/03 MT..KB SERIES THREE PHASE BRIDGE Power Modules Features Package fully compatible with the industry standard INT-Apak po

(19 views)

Bulletin I27501 rev. A 05/03 MT..KB SERIES THREE PHASE BRIDGE Power Modules Features Package fully compatible with the industry standard INT-Apak po

(19 views)

G3R350MT12J 1200 V 350 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode Features • G3R™ (3rd Generation) Technology • Low Temperature C

(19 views)

Wire Wound SMD Power Inductors – SPH Series Operating Temp. : -40℃~+125℃ (Including self-heating) FEATURES z Magnetic-resin shielded construction red

(18 views)

G3R450MT17J 1700 V 450 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode Features • G3R™ Technology with +15 V Gate Drive • Softer RDS(O

(18 views)