30V N-Channel MOSFET Datasheet | Specifications & PDF Download

A09T http://www.osen.net.cn 30V N-CHANNEL MOSFET  Features：  Fast switching speed  High input impedance and low level drive  Improved dv/dt c

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AON6324 30V N-Channel MOSFET General Description • Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS an

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AON6554 30V N-Channel AlphaMOS General Description • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(ON) at 4.5V VGS • Low Gate Char

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B04N03-VB B04N03-VB Datasheet N-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.002 at VGS = 10 V 0.003 at VGS

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AON6426 30V N-Channel MOSFET General Description The AON6426 combines advanced trench MOSFET technology with a low resistance package to provide extr

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30V, 100A P-CHANNEL POWER MOSFET GENERAL DESCRIPTION The SFM3010PT uses advanced trench technology and design to provide excellent RDS(on) with low ga

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AON6380 30V N-Channel AlphaMOS General Description • Trench Power AlphaMOS (αMOS LV) technology • Low RDS(ON) • Low Gate Charge • High Current Capabi

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AON7408 30V N-Channel MOSFET General Description • The AON7408 uses advanced trench technology and design to provide excellent RDS(ON) with low gate

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AON7400A 30V N-Channel MOSFET General Description Product Summary • The AON7400A combines advanced trench MOSFET technology with a low resistance p

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-30V, -25A P-CHANNEL POWER MOSFET GENERAL DESCRIPTION The SFN3002PT5 use advanced trench technology and design to provide excellent RDS(on) with low g

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www.atcsemi.com AT03900P 30V N-Channel MOSFET Features Product Summary ● Advanced high cell density Trench technology ● Super Low Gate Charge ● Ex

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AONY36356 30V Dual Asymmetric N-Channel MOSFET General Description • Trench Power MOSFET technology • Low RDS(ON) at 4.5V Vgs • Low Gate Charge • Hig

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Ordering number : ENA1778A ECH8667 P-Channel Power MOSFET –30V, –5.5A, 39mΩ, Dual ECH8 http://onsemi.com Features • ON-resistance RDS(on)1=30mΩ(typ

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MOSFET – N-Channel, POWERTRENCH) 30 V, 1.23 mW FDMC012N03 General Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH pr

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AO3400 30V N-Channel MOSFET General Description Product Summary The AO3400 combines advanced trench MOSFET technology with a low resistance package

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PAN3080L 30V N-channel enhancement mode MOSFET General Description The PAN3080L is a 30V N-channel enhancement mode MOSFET which uses advanced trench

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30V,12A N-CHANNEL POWER MOSFET GENERAL DESCRIPTION The SFS3001T2 uses advanced trench technology and design to provide excellent RDS(on) with low gate

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-30V, -20A P-CHANNEL POWER MOSFET GENERAL DESCRIPTION The SFN3002PT use advanced trench technology and design to provide excellent RDS(on) with low ga

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NVLUD4C26N MOSFET – Power, Dual, N-Channel, mCool, 2.0x2.0x0.55 mm, UDFN6 30 V, 7.3 A Features • UDFN Package with Exposed Drain Pads for Excellent

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FDMA1430JP Integrated P-Channel PowerTrench® MOSFET and BJT FDMA1430JP Integrated P-Channel PowerTrench® MOSFET and BJT -30 V, -2.9 A, 90 mΩ July 20

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