3205 Datasheet | Specifications & PDF Download

Elektronische Bauelemente KTC3205 NPN Silicon General Purpose Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEAT

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IRF3205 ® Pb Free Plating Product IRF3205 Pb N-Channel Trench Process Power MOSFET Transistor General Description The IRF3205 is N-channel MOS F

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF3205， IIRF3205 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤8.0mΩ ·Enhancement m

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l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche R

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3205 product description FHP3205 is a low-voltage high-current power MOS field effect transistor, widely used in power inverters Features 110A, 55V,

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AUF3205ZS-VB AUF3205ZS-VB Datasheet N-Channel 60 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS RDS(on) VGS = 10 V ID Configuration 60 V 4 m

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AUF3205Z-VB AUF3205Z-VB Datasheet N-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS RDS(on) VGS = 10 V ID Configuration 60 V 5 m 120 A Single

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SMD Type Transistors Epitaxial Planar NPN Transistor KTC3205 ■ Features ● Collector Power Dissipation: PC=500mW ● Collector Current: IC=2A SOT-89 4

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CMP3205 N-Ch 60V Fast Switching MOSFETs General Description Product Summery TheCMP3205 is a N-channel Power MOSFET. It has specifically been desig

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CMP3205-VB CMP3205-VB Datasheet N-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS RDS(on) VGS = 10 V ID Configuration 60 V 5 m 120 A Single F

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SEMICONDUCTOR IRF3205 Series N-Channel Power MOSFET (110A, 55Volts) RoHS RoHS Nell High Power Products DESCRIPTION The Nell IRF3205 is a three-ter

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HMS3205D-VB HMS3205D-VB Datasheet N-Channel 60 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS =

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l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche R

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PAW3205DB-TJ3T PAW3205DB-TJ3T LOW POWER WIRELESS MOUSE SENSOR General Description The PAW3205DB-TJ3T is a high performance and low power CMOS process

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BIPOLAR TRANSISTOR (NPN) FEATURES  Complementary to KTA1273  High Current Application  Surface Mount device MECHANICAL DATA  Case: SOT-89  Case

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www.DataSheet.co.kr SAMWIN SW3205 N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 0.008 Ω)@VGS=10V ■ Gate Charge (Typ 146nC) ■ Improved

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l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF3205S ·DESCRIPTION ·Drain Current ID=110A@ TC=25℃ ·Drain Source Voltage : VDSS= 55V(Min) ·

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www.DataSheet.co.kr PD - 94653 AUTOMOTIVE MOSFET IRF3205Z HEXFET® Power MOSFET D Features ● ● ● ● ● Advanced Process Technology Ultra Low On-Resi

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www.DataSheet4U.com PD - 94928 IRF3205VPbF • Lead-Free www.irf.com 1 1/6/04 www.DataSheet4U.com IRF3205VPbF 2 www.irf.com www.DataSheet4U.com

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