320N20N Datasheet | Specifications & PDF Download

IPB320N20N3 G IPP320N20N3 G IPI320N20N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (

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Isc N-Channel MOSFET Transistor IPB320N20N3G ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤32mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche t

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BSC320N20NS3 G MOSFET OptiMOSTM 3 Power-Transistor, 200 V Features • N-channel, normal level • Excellent gate charge x RDS(on) product (FOM) • Very l

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IPB320N20N3 G IPP320N20N3 G IPI320N20N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (

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BSC320N20NS3 G MOSFET OptiMOSTM 3 Power-Transistor, 200 V Features • N-channel, normal level • Excellent gate charge x RDS(on) product (FOM) • Very l

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IPB320N20N3 G IPP320N20N3 G IPI320N20N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (

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isc N-Channel MOSFET Transistor IPP320N20N3，IIPP320N20N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤32mΩ ·Enhancement mode ·Fast Switchin

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IPB320N20N3 G IPP320N20N3 G IPI320N20N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (

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IPB320N20N3 G IPP320N20N3 G IPI320N20N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (

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IPD320N20N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistanc

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IPD320N20N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistanc

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IPB320N20N3 G IPP320N20N3 G IPI320N20N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (

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IPB320N20N3 G IPP320N20N3 G IPI320N20N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (

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isc N-Channel MOSFET Transistor IPD320N20N3,IIPD320N20N3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤32mΩ ·Enhancement mode: ·100% avalanch

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