336-channel Datasheet | Specifications & PDF Download

SM4336NSKP Features · 30V/65A, RDS(ON)=5.3mW (Max.) @ VGS=10V RDS(ON)=7.5mW (Max.) @ VGS=4.5V · Reliable and Rugged · ESD Protection · Lead Free and G

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N-Channel 30-V (D-S) MOSFET Si7336ADP Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0030 at VGS = 10 V 30 0.0040 at VGS = 4.5 V ID (A)

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SSC8336GS1 Dual N-Channel Enhancement Mode MOSFET  Features  Applications  Inverter; VDS VGS RDSon TYP ID 30V ±20V 16mR@10V 20mR@4V5 9A 

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CES2336-VB CES2336-VB Datasheet N-Channel 60-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.075 at VGS = 10 V 60 0.086 at V

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2SK3363-01-VB 2SK3363-01-VB Datasheet N-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at V

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Preliminary Datasheet LP3368 Dual Channel Charge Pump LED Driver General Description The LP3368 charge pump LED driver is designed for powering dual

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n-cha'1nel JFETs design1ed for • • • • Small-Si ~nal Low Power Applicati

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On-Bright Confidential to IVT OB3362F 4 Channels High Performance LED Driver GENERAL DESCRIPTION The OB3362F is a highly integrated and high perform

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N-Channel 30 V (D-S) MOSFET DTQ6336 www.din-tek.jp PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.0047 at VGS = 10 V 0.0076 at VGS = 4.5 V ID (A)a, e 7

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November 1998 FDN336P Single P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description This P-Channel 2.5V specified MOSFET is produced using

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LT1336 Half-Bridge N-Channel Power MOSFET Driver with Boost Regulator Features n Floating Top Driver Switches Up to 60V n Internal Boost Regulator

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AOZ8336DI-03 One-Channel Bi-directional High Surge TVS General Description The AOZ8336DI-03 is a 1-channel bidirectional high surge transient voltage

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n-cha'1nel JFETs design1ed for • • • • Small-Si ~nal Low Power Applicati

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PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3360 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3360

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Features • Atmel® maXTouch™ Touchscreen – True 12-bit multiple touch with independent XY tracking for up to 10 concurrent touches in real time with to

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a FEATURES Six 16-Bit A/D Converters Programmable Input Sample Rate Simultaneous Sampling 77 dB SNR 64 kS/s Maximum Sample Rate –83 dB Crosstalk Low G

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2SK1336 Silicon N-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3365 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3365 is N-Channel MOS Field Effe

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Si7336DP Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.00325 @ VGS = 10 V 0.0042 @ VGS = 4.5 V ID

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June 1997 NDS336P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description SuperSOTTM-3 P-Channel logic level enhancement m

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