3415 Datasheet | Specifications & PDF Download

Order this document by MC34151/D High Speed Dual MOSFET Drivers The MC34151/MC33151 are dual inverting high speed drivers specifically designed for a

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PI3PCIE3415 3.3V, PCI Express® 3.0 2-Lane, 2:1 Mux/DeMux Switch Features ÎÎ4 Differential Channel, 2:1 Mux/DeMux ÎÎPCI Express® 3.0 Performance, 8.0G

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MICRONAS PRELIMINARY DATA SHEET MSP 34x5G Multistandard Sound Processor Family Edition March 5, 2001 6251-480-3PD MICRONAS MSP 34x5G PRELIMINARY

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MSP3415E -20V(D-S) P-Channel Enhancement Mode Power MOS FET General Features ● VDS = -20V,ID =-4A RDS(ON) < 60mΩ @ VGS=-2.5V RDS(ON) < 45mΩ @ VGS=-4

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PE3415 P-Channel Enhancement Mode Power MOSFET Description The PE3415 uses advanced trench technology to provide excellent RDS(ON), low gate charge

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P-Channel Enhancement Mode Power MOSFET MX3415L DESCRIPTION The MX3415L uses advanced trench technology to provide excellent RDS(ON), low gate charge

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The Future of Analog IC Technology DESCRIPTION The MP3415 is a high-efficiency, synchronous, current-mode, step-up converter with output disconnect. T

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www.DataSheet.co.kr Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr Datasheet pdf - http://www.DataSheet4U.net/

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MI3415 MI3415-VB Datasheet P-Channel 30 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () Typ. 0.046 at VGS = - 10 V - 30 0.04

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Order this document by MC34152/D High Speed Dual MOSFET Drivers The MC34152/MC33152 are dual noninverting high speed drivers specifically designed fo

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GOFORD Description The 3415 A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low a

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PRELIMINARY TECHNICAL DATA a Preliminary Technical Data FEATURES All-In-One Synchronous Buck Driver One PWM Signal Generates Both Drives Anticross-Co

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AO3415 20V P-Channel MOSFET General Description The AO3415 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operatio

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The Future of Analog IC Technology DESCRIPTION The MP3415 is a high-efficiency, synchronous, current-mode, step-up converter with output disconnect. T

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MT3415 This P-Channel Power MOSFET is produced using MOS-TECH Semiconductor's advanced Power -4.9 33m 45m 7.3 Portable electronics DC/DC convers

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http://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Pb Free Product NCE3415Y Description The NCE3415Y uses advanced trench technolog

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PE3415A P-Channel Enhancement Mode Power MOSFET Description The PE3415A uses advanced trench technology to provide excellent RDS(ON), low gate charg

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Alfa-MOS Technology General Description AFP3415EA, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), lo

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www.DataSheet.co.kr Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr Datasheet pdf - http://www.DataSheet4U.net/

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