35-Channel Datasheet | Specifications & PDF Download

AX2358 AX2358 ，， 2 ——6 ， 2 6 ， 6 ， I2C ，0 -79dB， 1dB ，，，， AV 。 z ：VCC=5.0～9.0V z 4 6 z 2 ——6 z ：0dB~-79dB， 1dB z 3.0Vrms(1KHZ,THD<1%) z ，

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MS4N1350 MS4N1350E MS4N1350B MS4N1350W MS4N1350FW N-channel 1500 V, 6 Ω, 4 A, Power MOSFET in TO-263,TO-247TO-220, TO-3PB, TO-3PF Features Type VDS

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SJ3358— IC SJ3358 SJ3358 、， ，，。 z z z z z z z z 。 ：，，。 ：，。 。 。 ，。 ， 4V。 DIP18 。 www.DataSheet4U.com URL:http://www.szsanjing.com ------

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MOSFET – P-Channel, POWERTRENCH) -30 V, -8.8 A, 20 mW FDS4435BZ Description This P−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH pro

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P-Channel Enhancement Mode Mosfet GENERAL DESCRIPTION The ME7835 P-Channel logic enhancement mode power field effect transistors are produced using hi

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FDS4935A March 2002 FDS4935A Dual 30V P-Channel PowerTrench MOSFET General Description This P-Channel MOSFET is a rugged gate version of Fairchild

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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Cor

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M54HC354 M74HC354 8 CHANNEL MULTIPLEXER/REGISTER (3 STATE) . HIGH SPEED tPD = 24 ns (TYP.) AT VCC = 5 V . LOW POWER DISSIPATION ICC = 4 µA (MAX.) AT

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FDC3512 February 2002 FDC3512 80V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve

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www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2006/04/20 REVISED DATE : GSC4835 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID

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www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/02/23 REVISED DATE :2006/11/09C GSC9435 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS

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2SK3566 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV) 2SK3566 Switching Regulator Applications • Low drain-source ON-resistanc

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NIKO-SEM P-Channel Logic Level Enhancement Mode P3506DTF Field Effect Transistor TO-220F Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(O

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AX2358 AX2358 ，， 2 ——6 ， 2 6 ， 6 ， I2C ，0 -79dB， 1dB ，，，， AV 。 z z z z z z z z ：VCC=5.0～9.0V 4 6 2 ——6 ：0dB~-79dB， 1dB 3.0Vrms(1KHZ,T

Rating: 1 ★ (6 votes)

Gre Pro STU/D35L01HA Sa mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor Ver 1.0 PRODUCT SUMMARY VDSS

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 P-channel Enhancement Mode MOSFET           The   uses  advanced  trench  technology  to  provide  excellent  RDS(ON)  and  low  gate  charge.  This

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AONY36356 30V Dual Asymmetric N-Channel MOSFET General Description • Trench Power MOSFET technology • Low RDS(ON) at 4.5V Vgs • Low Gate Charge • Hig

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MOSFET – N-Channel, POWERTRENCH® 80 V, 130 A, 2.4 mW FDMS86350 Description This N−Channel MOSFET is produced using onsemi advanced POWERTRENCH® proces

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Silan Microelectronics SVT035R5ND(MJ)(T)_Datasheet 100A, 30V N-CHANNEL MOSFET DESCRIPTION The SVT035R5ND(MJ)(T) is an N-channel enhancement mode pow

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General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has bee

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