35-Channel Datasheet | Specifications & PDF Download

AX2358 AX2358 ，， 2 ——6 ， 2 6 ， 6 ， I2C ，0 -79dB， 1dB ，，，， AV 。 z ：VCC=5.0～9.0V z 4 6 z 2 ——6 z ：0dB~-79dB， 1dB z 3.0Vrms(1KHZ,THD<1%) z ，

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 P-channel Enhancement Mode MOSFET           The   uses  advanced  trench  technology  to  provide  excellent  RDS(ON)  and  low  gate  charge.  This

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AX2358 AX2358 ，， 2 ——6 ， 2 6 ， 6 ， I2C ，0 -79dB， 1dB ，，，， AV 。 z z z z z z z z ：VCC=5.0～9.0V 4 6 2 ——6 ：0dB~-79dB， 1dB 3.0Vrms(1KHZ,T

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HY3506P/B N-Channel Enhancement Mode MOSFET Features • 60V/190A RDS(ON) = 3.5 m(typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Le

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General Description The ET2354 is a 4 stereo inputs/2­channel outputs digital control audio processor for the low voltage operation. Volume, tone(bass

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AONY36356 30V Dual Asymmetric N-Channel MOSFET General Description • Trench Power MOSFET technology • Low RDS(ON) at 4.5V Vgs • Low Gate Charge • Hig

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AONY36354 30V Dual Asymmetric N-Channel MOSFET General Description • Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • High Current Ca

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2SK3566 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV) 2SK3566 Switching Regulator Applications • Low drain-source ON-resistanc

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2SK3520-01MR Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MO

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd P-Channel 30-V (D-S) MOSFET 4435 PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.020 @ VGS = −10 V −30

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MS4N1350 MS4N1350E MS4N1350B MS4N1350W MS4N1350FW N-channel 1500 V, 6 Ω, 4 A, Power MOSFET in TO-263,TO-247TO-220, TO-3PB, TO-3PF Features Type VDS

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APM4435 P-Channel Enhancement Mode MOSFET Features Pin Description • -30V/-8A, RDS(ON) = 16mΩ(typ.) @ VGS = -10V RDS(ON) = 24mΩ(typ.) @ VGS = -4.5

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2SK3528-01R FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings TO-3PF Super FAP-G Series Features High speed switching Low on-resistan

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isc N-Channel MOSFET Transistor 2SK3549W FEATURES ·Drain Current : ID= 10A@ TC=25℃ ·Drain Source Voltage : VDSS= 900V(Min) ·Static Drain-Source On-R

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F packaging ·High speed switching ·Standard level gate drive ·Easy to use ·100% avalanche tested

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isc N-Channel MOSFET Transistor ·FEATURES · Drain-source on-resistance: RDS(on) ≤ 0.52Ω@10V ·Low leakage current: IDSS <100 µA @VDS = 500 V ·100% ava

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isc N-Channel MOSFET Transistor 2SK3561 FEATURES ·Drain Current : ID= 8A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Res

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