35-Channel Datasheet | Specifications & PDF Download

APM9935 Dual P-Channel Enhancement Mode MOSFET Features • • www.DataSheet4U.com Pin Description 5 / 5 / & % $ # , , , , -20V/-6A, RDS(ON)

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AX2358 AX2358 ，， 2 ——6 ， 2 6 ， 6 ， I2C ，0 -79dB， 1dB ，，，， AV 。 z ：VCC=5.0～9.0V z 4 6 z 2 ——6 z ：0dB~-79dB， 1dB z 3.0Vrms(1KHZ,THD<1%) z ，

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 P-channel Enhancement Mode MOSFET           The   uses  advanced  trench  technology  to  provide  excellent  RDS(ON)  and  low  gate  charge.  This

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MS4N1350 MS4N1350E MS4N1350B MS4N1350W MS4N1350FW N-channel 1500 V, 6 Ω, 4 A, Power MOSFET in TO-263,TO-247TO-220, TO-3PB, TO-3PF Features Type VDS

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SHENZHEN HUAXUANYANG ELECTRONICS CO.,LTD 9435A -30V P-Channel Enhancement Mode MOSFET General Description: The 9435A is the single P-Channel logic

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AX2358 AX2358 ，， 2 ——6 ， 2 6 ， 6 ， I2C ，0 -79dB， 1dB ，，，， AV 。 z z z z z z z z ：VCC=5.0～9.0V 4 6 2 ——6 ：0dB~-79dB， 1dB 3.0Vrms(1KHZ,T

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AONY36356 30V Dual Asymmetric N-Channel MOSFET General Description • Trench Power MOSFET technology • Low RDS(ON) at 4.5V Vgs • Low Gate Charge • Hig

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AONY36354 30V Dual Asymmetric N-Channel MOSFET General Description • Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • High Current Ca

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HY3506P/B N-Channel Enhancement Mode MOSFET Features • 60V/190A RDS(ON) = 3.5 m(typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Le

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MSL4435A Chip Integration Technology Corporation P-Channel ENHANCEMENT MODE POWER MOSFET Features: □ Advanced high cell density Trench technology □ E

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isc N-Channel MOSFET Transistor ·FEATURES · Drain-source on-resistance: RDS(on) ≤ 0.52Ω@10V ·Low leakage current: IDSS <100 µA @VDS = 500 V ·100% ava

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2SK3567 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3567 Switching Regulator Applications • • • • Low drain-source ON res

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2SK3566 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV) 2SK3566 Switching Regulator Applications • Low drain-source ON-resistanc

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GOFORD 9435 DESCRIPTION The 9435 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as l

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK1358 DESCRIPTION ·Drain Current –ID= 9A@ TC=25℃ ·Drain Source Vo

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Silan Microelectronics SVT035R5ND(MJ)(T)_Datasheet 100A, 30V N-CHANNEL MOSFET DESCRIPTION The SVT035R5ND(MJ)(T) is an N-channel enhancement mode pow

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APM4435 P-Channel Enhancement Mode MOSFET Features Pin Description • -30V/-8A, RDS(ON) = 16mΩ(typ.) @ VGS = -10V RDS(ON) = 24mΩ(typ.) @ VGS = -4.5

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Shenzhen Tuofeng Semiconductor Technology co., LTD 4835 P-Channel Enhancement Mode MOSFET Features Pin Description • -30V/-8A, RDS(ON) = 16mΩ(typ.

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