35-Channel Datasheet | Specifications & PDF Download

AX2358 AX2358 ，， 2 ——6 ， 2 6 ， 6 ， I2C ，0 -79dB， 1dB ，，，， AV 。 z ：VCC=5.0～9.0V z 4 6 z 2 ——6 z ：0dB~-79dB， 1dB z 3.0Vrms(1KHZ,THD<1%) z ，

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 P-channel Enhancement Mode MOSFET           The   uses  advanced  trench  technology  to  provide  excellent  RDS(ON)  and  low  gate  charge.  This

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AX2358 AX2358 ，， 2 ——6 ， 2 6 ， 6 ， I2C ，0 -79dB， 1dB ，，，， AV 。 z z z z z z z z ：VCC=5.0～9.0V 4 6 2 ——6 ：0dB~-79dB， 1dB 3.0Vrms(1KHZ,T

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AONY36354 30V Dual Asymmetric N-Channel MOSFET General Description • Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • High Current Ca

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MS4N1350 MS4N1350E MS4N1350B MS4N1350W MS4N1350FW N-channel 1500 V, 6 Ω, 4 A, Power MOSFET in TO-263,TO-247TO-220, TO-3PB, TO-3PF Features Type VDS

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MOSFET – P-Channel, Logic Level, POWERTRENCH) FDS4435A General Description This P−Channel Logic Level MOSFET is produced using ON Semiconductor’s ad

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SDM9435A-VB SDM9435A-VB Datasheet P-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.033 at VGS = - 10 V - 30 0.

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HY3506P/B N-Channel Enhancement Mode MOSFET Features • 60V/190A RDS(ON) = 3.5 m(typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Le

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AONY36356 30V Dual Asymmetric N-Channel MOSFET General Description • Trench Power MOSFET technology • Low RDS(ON) at 4.5V Vgs • Low Gate Charge • Hig

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UMW R General Description This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Ba

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General Description The ET2354 is a 4 stereo inputs/2­channel outputs digital control audio processor for the low voltage operation. Volume, tone(bass

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Shenzhen Tuofeng Semiconductor Technology co., LTD 4835 P-Channel Enhancement Mode MOSFET Features Pin Description • -30V/-8A, RDS(ON) = 16mΩ(typ.

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Ordering number : ENA1710B ECH8657 N-Channel Power MOSFET 35V, 4.5A, 59mΩ, Dual ECH8 http://onsemi.com Features • 4V drive • Halogen free complianc

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd P-Channel 30-V (D-S) MOSFET 4435 PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.020 @ VGS = −10 V −30

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HMS35N10K N-Channel Super Trench Power MOSFET Description The HMS35N10K uses Super Trench technology that is uniquely optimized to provide the most e

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK1358 DESCRIPTION ·Drain Current –ID= 9A@ TC=25℃ ·Drain Source Vo

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iscN-Channel MOSFET Transistor 2SK3564，I2SK3564 ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 3.7Ω (typ.) ·Enhancement mode: Vth = 2.0 to 4.0

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SHENZHEN HUAXUANYANG ELECTRONICS CO.,LTD 9435A -30V P-Channel Enhancement Mode MOSFET General Description: The 9435A is the single P-Channel logic

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2SK3567 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3567 Switching Regulator Applications • • • • Low drain-source ON res

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