AONY36354 - Dual Asymmetric N-Channel MOSFET
* Trench Power MOSFET technology * Low RDS(ON) * Low Gate Charge * High Current Capability * RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Q1 30V 49A <5.3mΩ <9.1mΩ Q2 30V 85A <2.6mΩ <3.5mΩ A
