Datasheet4U Logo Datasheet4U.com

AONY36306 - 30V Dual Asymmetric N-Channel MOSFET

Datasheet Summary

Description

Trench Power MOSFET technology Low RDS(ON) at 4.5V Vgs Low Gate Charge High Current Capability RoHS 2.0 and Halogen-Free Compliant Applications DC/DC Converters in Computer See Note I Product Summary VDS ID (at VGS=10V) RDS(ON) (

📥 Download Datasheet

Datasheet preview – AONY36306

Datasheet Details

Part number AONY36306
Manufacturer Alpha & Omega Semiconductors
File Size 712.91 KB
Description 30V Dual Asymmetric N-Channel MOSFET
Datasheet download datasheet AONY36306 Datasheet
Additional preview pages of the AONY36306 datasheet.

📁 Similar Datasheet

  • AON6200L - 30V N-Channel MOSFET (Freescale)
  • AON6405 - P-Channel MOSFET (VBsemi)
  • AON6910A - Dual N-Channel MOSFET (VBsemi)
  • AON7202 - N-Channel 30V MOSFET (VBsemi)
  • AON7405 - P-Channel 30V MOSFET (VBsemi)
  • AON7446 - N-Channel MOSFET (VBsemi)
  • AON7502 - N-Channel 30V MOSFET (VBsemi)
  • AON7702A - N-Channel 30V MOSFET (VBsemi)
  • AON7820 - Dual N-Channel 20V MOSFET (VBsemi)
Other Datasheets by Alpha & Omega Semiconductors

Full PDF Text Transcription

Click to expand full text
AONY36306 30V Dual Asymmetric N-Channel MOSFET General Description • Trench Power MOSFET technology • Low RDS(ON) at 4.5V Vgs • Low Gate Charge • High Current Capability • RoHS 2.0 and Halogen-Free Compliant Applications • DC/DC Converters in Computer • See Note I Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Q1 Q2 30V 30V 32A 32A < 6mΩ < 3.8mΩ < 8.6mΩ < 4.
Published: |