.
HAOHAI
A2SHB - N-Channel MOSFET
3.7A, 20V N N N-Channel Enhancement Mode Field Effect Transistor SMD Features ■20V, 3.7A, RDS(ON)=50mΩ @ VGS=4.5V ■High dense cell design fo.
Bruckewell
A1SHB - P-Channel Enhancement Mode Power MOSFET
MS23P01S P-Channel Enhancement Mode Power MOSFET Description The MS23P01S uses advanced trench technology to provide excellent RDS(ON), low gate char.
REACTOR
RM9003B - Single channel constant current LED controller
LED constant current control chip RM9003B General Description ： RM9003B is a one_stage LED constant current driving control chip which Compatible wit.
Excelliance MOS
B20N03 - N-Channel MOSFET
CHIPSET-IC.COM N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 20mΩ ID 12A G UIS, .
INCHANGE
3DD13009 - NPN Transistor
isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DD13009 DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collect.
Inchange Semiconductor
LM317 - Adjustable Voltage Regulator
isc Adjustable Voltage Regulator INCHANGE Semiconductor LM317 FEATURES ·Output Voltage Range :1.2V to 37V ·Output Current In Excess of 1.5A ·0.1% Li.
powerforest
PF7708B - Single Channel WLED Driver
PF7708B Single Channel WLED Driver with Integrated Dimming MOSFET Preliminary Specification P4 FEATURES Wide Input Range: 9V to 30V Curre.
Huajing
CS150N03 - Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET ○R CS150N03 A8 General Description： CS150N03 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced tr.
OSEN
A09T - 30V N-CHANNEL MOSFET
A09T http://www.osen.net.cn 30V N-CHANNEL MOSFET Features： Fast switching speed High input impedance and low level drive Improved dv/dt c.
BetaTHERM
0.1K1MBD1 - Interchangeable mini-BetaCURVE Probe
BetaTHERM Sensors Photo? Interchangeable mini-BetaCURVE Probe Interchangeable mini-BetaCURVE Probe: Applications: ¥ Reduced size allows localized tem.
ST Microelectronics
P60NF06 - N-CHANNEL Power MOSFET
STP60NF06 N-channel 60V - 0.014Ω - 60A TO-220 STripFET II™ Power MOSFET General features Type STP60NF06 VDSS 60V RDS(on) <0.016Ω ID 60A ■ Except.
H&M Semiconductor
A1SHB - P-Channel Trench Power MOSFET
HM2301B P-Channel Enhancement Mode Power MOSFET Description The HM2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge.
Ruichips
RU6888R - N-Channel Advanced Power MOSFET
RU6888R N-Channel Advanced Power MOSFET MOSFET Features • 68V/88A, RDS (ON) =6mΩ (Typ.) @ VGS=10V • Ultra Low On-Resistance • Exceptional dv/dt capab.
Excelliance MOS
EMZB08P03V - P-Channel Logic Level Enhancement Mode Field Effect Transistor
P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS -30V RDSON (MAX.) 8.5mΩ ID -25A P-Channel MOSFET UIS, R.
Excelliance MOS
B09N03 - N-Channel Logic Level Enhancement Mode Field Effect Transistor
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 9mΩ ID 50A G UIS, Rg 100% Tested S.
Huajing Microelectronics
CS630A4H - Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET CS630 A4H ○R General Description： CS630 A4H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligne.
HOOYI
HY4008 - N-Channel MOSFET
HY4008W/A N-Channel Enhancement Mode MOSFET Features • 80V/200A RDS(ON) = 2.9 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Le.
Rectron
A19T - P-Channel Enhancement Mode Power MOSFET
RM3401 P-Channel Enhancement Mode Power MOSFET Description The RM3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge .
Inchange Semiconductor
D5011 - 2SD5011
www.DataSheet.co.kr INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD5011 DESCRIPTION ·High Breakdown Voltage.
