4-Chan Datasheet | Specifications & PDF Download

isc Silicon PNP Power Transistors BDT82/84/86/88 DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= -5A ·Collector-Emitter Sustaining Voltage- : VCEO(

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3.7A, 20V N 　N 　N-Channel Enhancement Mode Field Effect Transistor SMD 　　Features 　■20V, 3.7A, RDS(ON)=50mΩ @ VGS=4.5V 　■High dense cell design fo

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CHIPSET-IC.COM N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 20mΩ ID 12A G UIS,

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DD13009 DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collect

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MS23P01S P-Channel Enhancement Mode Power MOSFET Description The MS23P01S uses advanced trench technology to provide excellent RDS(ON), low gate char

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LED constant current control chip RM9003B General Description ： RM9003B is a one_stage LED constant current driving control chip which Compatible wit

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isc Adjustable Voltage Regulator INCHANGE Semiconductor LM317 FEATURES ·Output Voltage Range :1.2V to 37V ·Output Current In Excess of 1.5A ·0.1% Li

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® RT8249A/B/C Dual-Channel Synchronous DC/DC Step-Down Controller with 5V/3.3V LDOs General Description The RT8249A/B/C is a dual-channel step-down,

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A09T http://www.osen.net.cn 30V N-CHANNEL MOSFET  Features：  Fast switching speed  High input impedance and low level drive  Improved dv/dt c

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ChipSourceTek LTK5328PBTL_28W  LTK5328 LTK5328 2 8W ， PBTL 、、AGC 、AB/D 、 、 EMI。PBTL ， ，。 ， ，， ，。 LTK5328 2 ALC ， ，。 AB/D ，AB FM 。 RF 。  L

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LTK5325 25.3WG   LTK5325 2 5.3W ，、、AB/D 。、 EMI， ，， ， ，。LTK5325  2.8V-5.5V  BOOST   （ALC）  D 、 EMI 2 ，  、 ，。  THD+N=10%，VB

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HAA2018 AB /D ，5.3W HAA2018FM、AB/D、、  AB、D 5.3W。EMI  D： FM。 －5.3W (VDD=5.0V, RL =2Ω，THD+N=10%) －3.2W (VDD=5.0V, RL =4Ω，THD+N=10%) HAA20

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Power MOSFETS DATASHEET LM30074NAI8A N-Channel Enhancement Mode MOSFET Leadpower-semiconductor Corp., Ltd sales@leadpower-semi.com (03) 6577339 FAX：(

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Single Channel Operational Amplifier LM321 LM321 is a general purpose, single channel op amp with internal compensation and a true differential input

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LTK5208 V1.3 LTK5208 27.9W F、   LTK5208 3Ω-7.9W、 F 。LTK5208 ， 7V。 LTK5208 ， D 、AB 、， IO ，， EN MODE , ，LTK5208 AB EMI 。 D 90%， D ，L

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IRF540 N-CHANNEL 100V - 0.055 Ω - 22A TO-220 LOW GATE CHARGE STripFET™ II POWER MOSFET TYPE VDSS RDS(on) IRF540 100 V <0.077 Ω s TYPICAL RDS(on)

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isc Three Terminal Positive Voltage Regulator 7812 FEATURES ·Output current in excess of 1.5A ·Output voltage of 12V ·Internal thermal overload prot

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isc Silicon NPN Power Transistor INCHANGE Semiconductor BD333 DESCRIPTION ·High DC Current Gain ·Complement to type BD334 ·Minimum Lot-to-Lot variat

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HM2301B P-Channel Enhancement Mode Power MOSFET Description The HM2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge

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