40-dB Datasheet | Specifications & PDF Download

MOSFET – N-Channel, POWERTRENCH) 80 V, 240 A, 2.0 mW FDBL86363-F085 Features  Typical RDS(on) = 1.5 mW at VGS = 10 V, ID = 80 A  Typical Qg(tot) =

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MOSFET – N-Channel, POWERTRENCH) 100 V, 240 A, 2.6 mW FDBL86063-F085 Features • Typical RDS(on) = 2 mW at VGS = 10 V, ID = 80 A • Typical Qg(tot) = 7

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MOSFET – POWERTRENCH) N-Channel 100 V, 240 A, 4.1 mW FDBL86066-F085 Features • Typical RDS(on) = 3.3 mW at VGS = 10 V, ID = 80 A • Typical Qg(tot) = 4

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FDB0250N807L N-Channel PowerTrench® MOSFET March 2016 FDB0250N807L N-Channel PowerTrench® MOSFET 80 V, 240 A, 2.2 mΩ Features „ Max rDS(on) = 2.2 m

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FDBL86566-F085 N-Channel PowerTrench® MOSFET FDBL86566-F085 N-Channel PowerTrench® MOSFET 60 V, 240 A, 2.4 mΩ Features „ Typical RDS(on) = 1.9 mΩ at

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PAW587 21 dB. Features: (typical values) Ultra High Linearity Low Noise Figure Rugged Construction Operation over a wide voltage range Usable for 50 o

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FDBL0150N60 N-Channel PowerTrench® MOSFET FDBL0150N60 N-Channel PowerTrench® MOSFET 60 V, 240 A, 1.5 mΩ June 2015 Features „ Typical RDS(on) = 1.1

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PAW588 34 dB. Features: (typical values) Ultra High Linearity Low Noise Figure Rugged Construction Operation over a wide voltage range Usable for 50 o

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PI3DBV40 3.3V, Wide Bandwidth, 4-Channel, 2:1 Mux/DeMux Video Switch with Single Enable Features • • • • • • • • • • • RON is 4Ω typical Low bit-to-bi

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FDBL0240N100 N-Channel PowerTrench® MOSFET FDBL0240N100 N-Channel PowerTrench® MOSFET 100 V, 210 A, 2.8 mΩ Features „ Max RDS(on) = 2.8 mΩ at VGS =

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PAW788 34 dB. Features: (typical values) Ultra High Linearity Low Noise Figure Rugged Construction Operation over a wide voltage range Usable for 50 o

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April 1996 NDP4060L / NDB4060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These logic level N-Channel enhance

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www.DataSheet4U.com POWER SOLUTION – DBL TO247 140W HIGH POWER RESISTORS Lead Free RNP100S Features and Applications Up to 140W high power rating a

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MOSFET – POWERTRENCH), N-Channel 100 V, 240 A, 2.6 mW FDBL86063 DATA SHEET www.onsemi.com Features • Typical RDS(on) = 2 mW at VGS = 10 V, ID = 80 A

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Broadband VHF Power Module, 13W 30 - 400 MHz Features q q q q q PHA4000-1 V4.00 Broadband Operation 30 to 400 MHz 60 dB Gain Control Range Thousands

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SMD Schottky Barrier Diode COMCHIP www.comchip.com.tw CDBF00340 Io = 3 0 mA V R = 40 Volt s Features (Lead-free Device) Designed for mounting on s

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TECH. CORP. SPECIFICATIONS CUSTOMER SAMPLE CODE MASS PRODUCTION CODE SAMPLE VERSION SPECIFICATIONS EDITION DRAWING NO. (Ver.) : : SG320240WRMDBAI30

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July 1996 NDP4050 / NDB4050 N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effec

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Blue Enhanced Photoconductive Silicon Photodiode www.DataSheet4U.com PDB-C140 PACKAGE DIMENSIONS INCH [mm] PACKAGE DIMENSIONS INCH [mm] .370 [9.40]

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