40N05 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 40A@ TC=25℃ ·Drain Source Voltage- : VDSS= 50V(Min) ·Static Drain-Source On-Resistance :

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Product Specification G128240x05 series Crystal Clear Technology sdn. bhd.  16Jalan TP5—Taman Perindustrian Sime UEP  47600 Subang Jaya—Selangor DE   

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Advance Technical Information TrenchT2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTH440N055T2 IXTT440N055T2 V

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Preliminary Technical Information TrenchMVTM Power MOSFET IXTH240N055T IXTQ240N055T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(o

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isc N-Channel MOSFET Transistor IXTC240N055T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 3.6mΩ@VGS=10V ·Fully characterized avalanche vo

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Preliminary Technical Information TrenchMVTM Power MOSFET IXTA240N055T IXTP240N055T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(o

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TrenchT2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA140N055T2 IXTP140N055T2 Symbol VDSS VDGR VGSM ID25 IL(RMS) IDM IA EAS PD TJ T

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Advance Technical Information TrenchT2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTH440N055T2 IXTT440N055T2 V

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RVQ040N05 FRA Nch 45V 4A Power MOSFET VDSS RDS(on) (Max.) ID PD 45V 53m: 4A 1.25W zFeatures 1) Low on - resistance. 2) Built-in G-S Protection Dio

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Preliminary Technical Information TrenchMVTM IXTA240N055T7 Power MOSFET N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 55 24

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isc N-Channel MOSFET Transistor IXTA140N055T2 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 5.4mΩ@VGS=10V ·Fully characterized avalanche v

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 Green Device Available  Super Low Gate Charge  Excellent CdV/dt effect decline  Advanced high cell density Trench technology CST40N05L N-Ch 40V

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Preliminary Technical Information TrenchMVTM Power MOSFET IXTA240N055T IXTP240N055T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(o

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Preliminary Technical Information TrenchMVTM IXTC240N055T Power MOSFET (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche

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Preliminary Technical Information TrenchMVTM Power MOSFET IXTH240N055T IXTQ240N055T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(o

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RVQ040N05 　　Nch 45V 4A Power MOSFET VDSS RDS(on)(Max.) ID PD 45V 53mΩ ±4.0A 1.25W lFeatures 1) Low on - resistance. 2) Built-in G-S Protection Diod

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 3.6mΩ@VGS=10V ·Fully characterized avalanche voltage and curr

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 3.6mΩ@VGS=10V ·Fully characterized avalanche voltage and curr

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isc N-Channel MOSFET Transistor IXTP240N055T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 3.6mΩ@VGS=10V ·Fully characterized avalanche vo

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isc N-Channel MOSFET Transistor IXTP140N055T2 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 5.4mΩ@VGS=10V ·Fully characterized avalanche v

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