IXTP140N055T2 Datasheet, Mosfet, INCHANGE

IXTP140N055T2 Features

• Mosfet
• Static drain-source on-resistance: RDS(on) ≤ 5.4mΩ@VGS=10V
• Fully characterized avalanche voltage and current
• 100% avalanche tested
• Minimum Lot-to-Lot

PDF File Details

Part number:

IXTP140N055T2

Manufacturer:

INCHANGE

File Size:

246.52kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

IXTP140N055T2 Application

• Applications
• ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 55 VGS Gate-Source Voltage ±20 ID

TAGS

IXTP140N055T2

INCHANGE

📁 Related Datasheet

IXTP140N055T2 - Power MOSFET (IXYS)
TrenchT2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA140N055T2 IXTP140N055T2 Symbol VDSS VDGR VGSM ID25 IL(RMS) IDM IA EAS PD TJ T.

IXTP140N12T2 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IXTP140N12T2 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 10mΩ@VGS=10V ·Fully characterized avalanche vol.

IXTP140N12T2 - Power MOSFET (IXYS)
TrenchT2TM Power MOSFET Advance Technical Information IXTA140N12T2 IXTP140N12T2 VDSS = 120V ID25 = 140A RDS(on)  10m N-Channel Enhancement Mode .

IXTP140P05T - Power MOSFET (IXYS)
TrenchPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated IXTA140P05T IXTP140P05T IXTH140P05T VDSS ID25 RDS(on) = = ≤ - 50V - 140A 9mΩ .

IXTP14N60P - PolarHV Power MOSFET (IXYS)
PolarTM Power MOSFET Enhancement Mode Avalanche Rated IXTA14N60P IXTP14N60P IXTQ14N60P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL .

IXTP14N60P - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IXTP14N60P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 550mΩ@VGS=10V ·Fully characterized avalanche volt.

IXTP14N60PM - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 550mΩ(Max) ·Fast Sw.

IXTP14N60PM - Power MOSFET (IXYS)
PolarHVTM Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTP14N60PM VDSS = ID25 = RDS(on).

IXTP100N04T2 - Power MOSFET (IXYS)
Preliminary Technical Information TrenchT2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA100N04T2 IXTP100N04T2 VDSS = 40V ID25 = 10.

IXTP100N04T2 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IXTP100N04T2 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 7mΩ@VGS=10V ·Fully characterized avalanche volt.