IXTP14N60P, IXTQ14N60P Datasheet - IXYS

IXTP14N60P - PolarHV Power MOSFET

PolarTM Power MOSFET Enhancement Mode Avalanche Rated IXTA14N60P IXTP14N60P IXTQ14N60P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C Maximum Lead Temperature for Soldering Plastic Body for 10s Mounting torque (TO-220 &TO-3P) TO-263 TO-220 TO-3P Maximum Ratings 600 V 600 V 30 V 40 V 14 A

IXTP14N60P Features

* International Standard Packages

* Fast Intrinsic Rectifier

* Avalanche Rated

* Low RDS(ON) and QG

* Low Package Inductance Advantages

* High Power Density

* Easy to Mount

* Space Savings Applications

* Switch-Mode and Resonant-Mode Power Supplies

* DC-DC Co

IXTQ14N60P_IXYS.pdf