IXTP14N60P Datasheet, Mosfet, IXYS

✔ IXTP14N60P Features

✔ IXTP14N60P Application

PDF File Details

Manufacture Logo for IXYS
IXYS manufacturer logo

Part number:

IXTP14N60P

Manufacturer:

IXYS

File Size:

201.29kb

Download:

📄 Datasheet

Description:

Polarhv power mosfet.

Datasheet Preview: IXTP14N60P 📥 Download PDF (201.29kb)
Page 2 of IXTP14N60P Page 3 of IXTP14N60P

TAGS

IXTP14N60P
PolarHV
Power
MOSFET
IXYS

📁 Related Datasheet

IXTP14N60P - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IXTP14N60P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 550mΩ@VGS=10V ·Fully characterized avalanche volt.

IXTP14N60PM - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 550mΩ(Max) ·Fast Sw.

IXTP14N60PM - Power MOSFET (IXYS)
PolarHVTM Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTP14N60PM VDSS = ID25 = RDS(on).

IXTP140N055T2 - Power MOSFET (IXYS)
TrenchT2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA140N055T2 IXTP140N055T2 Symbol VDSS VDGR VGSM ID25 IL(RMS) IDM IA EAS PD TJ T.

IXTP140N055T2 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IXTP140N055T2 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 5.4mΩ@VGS=10V ·Fully characterized avalanche v.

IXTP140N12T2 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IXTP140N12T2 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 10mΩ@VGS=10V ·Fully characterized avalanche vol.

IXTP140N12T2 - Power MOSFET (IXYS)
TrenchT2TM Power MOSFET Advance Technical Information IXTA140N12T2 IXTP140N12T2 VDSS = 120V ID25 = 140A RDS(on)  10m N-Channel Enhancement Mode .

IXTP140P05T - Power MOSFET (IXYS)
TrenchPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated IXTA140P05T IXTP140P05T IXTH140P05T VDSS ID25 RDS(on) = = ≤ - 50V - 140A 9mΩ .

IXTP100N04T2 - Power MOSFET (IXYS)
Preliminary Technical Information TrenchT2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA100N04T2 IXTP100N04T2 VDSS = 40V ID25 = 10.

IXTP100N04T2 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IXTP100N04T2 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 7mΩ@VGS=10V ·Fully characterized avalanche volt.

Stock and price

Littelfuse Inc
MOSFET N-CH 600V 14A TO220AB
DigiKey
IXTP14N60P
177 In Stock
Qty : 1000 units
Unit Price : $2.16
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts