IXTP14N60PM
INCHANGE
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N-channel mosfet.
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IXTP14N60P - PolarHV Power MOSFET
(IXYS)
PolarTM Power MOSFET
Enhancement Mode Avalanche Rated
IXTA14N60P IXTP14N60P IXTQ14N60P
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
PD
TJ TJM Tstg
TL .
IXTP14N60P - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IXTP14N60P
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 550mΩ@VGS=10V ·Fully characterized avalanche volt.
IXTP14N60PM - Power MOSFET
(IXYS)
PolarHVTM Power MOSFET
(Electrically Isolated Tab)
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXTP14N60PM
VDSS = ID25 =
RDS(on).
IXTP140N055T2 - Power MOSFET
(IXYS)
TrenchT2TM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA140N055T2 IXTP140N055T2
Symbol
VDSS VDGR
VGSM
ID25 IL(RMS) IDM
IA EAS
PD
TJ T.
IXTP140N055T2 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IXTP140N055T2
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 5.4mΩ@VGS=10V ·Fully characterized avalanche v.
IXTP140N12T2 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IXTP140N12T2
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 10mΩ@VGS=10V ·Fully characterized avalanche vol.
IXTP140N12T2 - Power MOSFET
(IXYS)
TrenchT2TM Power MOSFET
Advance Technical Information
IXTA140N12T2 IXTP140N12T2
VDSS = 120V
ID25 = 140A RDS(on) 10m
N-Channel Enhancement Mode .
IXTP140P05T - Power MOSFET
(IXYS)
TrenchPTM Power MOSFETs
P-Channel Enhancement Mode Avalanche Rated
IXTA140P05T IXTP140P05T IXTH140P05T
VDSS ID25
RDS(on)
= = ≤
- 50V - 140A 9mΩ
.
IXTP100N04T2 - Power MOSFET
(IXYS)
Preliminary Technical Information
TrenchT2TM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA100N04T2 IXTP100N04T2
VDSS = 40V ID25 = 10.
IXTP100N04T2 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IXTP100N04T2
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 7mΩ@VGS=10V ·Fully characterized avalanche volt.
