40N10 Datasheet | Specifications & PDF Download

40N10(F,B,H) 40A mps,100 Volts N-CHANNEL MOSFET FEATURE  40A,100V,RDS(ON)=40mΩ@VGS=10V/20A  Low gate charge  Low Ciss  Fast switching  100% av

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UNISONIC TECHNOLOGIES CO., LTD USG40N10 Preliminary 48A, 100V N-CHANNEL POWER MOSFET POWER MOSFET  DESCRIPTION The UTC USG40N10 is a N-channel P

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AP140N10FIPIT 100V N-Channel Enhancement Mode MOSFET Description The AP140N10P/T uses advanced APM-SGTⅠⅠ technology to provide excellent RDS(ON), low

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RFG40N10, RFP40N10, RF1S40N10, RF1S40N10SM Data Sheet January 2002 40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs These are N-Channel power MOSFETs ma

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BSC040N10NS5 MOSFET OptiMOSTM 5 Power-Transistor, 100 V Features • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Sup

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STL40N10F7 N-channel 100 V, 0.02 Ω typ., 10 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data Figure 1: Internal s

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DATA SHEET www.onsemi.com MOSFET – Power, Single N-Channel 100 V, 38 mW, 21 A NVMFS040N10MCL V(BR)DSS 100 V RDS(ON) MAX 38 mW @ 10 V 53 mW @ 4.5 V

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() CRST040N10N, CRSS037N10N SkyMOS1 N-MOSFET 100V, 3.3mΩ, 120A Features • Uses CRM(CQ) advanced SkyMOS1 technology • Extremely low on-resistance RDS

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() CRST040N10N3,CRSS038N10N3 SkyMOS3 N-MOSFET 100V, 3.4mΩ, 140A Features • Uses CRM(CQ) advanced SkyMOS3 technology • Extremely low on-resistance RD

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AP140N10FIPIT 100V N-Channel Enhancement Mode MOSFET Description The AP140N10P/T uses advanced APM-SGTⅠⅠ technology to provide excellent RDS(ON), low

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BSC040N10NS5SC MOSFET OptiMOSTM 5 Power-Transistor, 100 V Features • Dual-side cooled package with lowest Junction-top thermal resistance • 175°C rat

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() Features • Uses CRM(CQ) advanced SkyMOS2 technology • Extremely low on-resistance RDS(on) • Excellent QgxRDS(on) product(FOM) • Qualified according

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STP40N10 STP40N10FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP40N10 STP40N10FI VDSS 100 V 100 V R DS( on) < 0.04 Ω < 0.04 Ω ID 40

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40N10(F,B,H) 40A mps,100 Volts N-CHANNEL MOSFET FEATURE  40A,100V,RDS(ON)=40mΩ@VGS=10V/20A  Low gate charge  Low Ciss  Fast switching  100% av

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor 40N10 ·FEATURES ·Drain Current ID= 40A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Stat

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RFG40N10, RFP40N10, RF1S40N10SM Data Sheet July 1999 File Number 2431.3 40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs These are N-Channel power MOSFE

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RFG40N10, RFP40N10, RF1S40N10SM Data Sheet July 1999 File Number 2431.3 40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs These are N-Channel power MOSFE

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RFG40N10LE, RFP40N10LE, RF1S40N10LESM Data Sheet October 1999 File Number 4061.5 40A, 100V, 0.040 Ohm, Logic Level N-Channel Power MOSFETs These N-Ch

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RU140N10R N-Channel Advanced Power MOSFET Features • 100V/140A RDS (ON)=6.5mΩ(Typ.) @ VGS=10V • Ultra Low On-Resistance • Low Gate Charge • Fast Swit

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www.din-tek.jp DT81 N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY V(BR)DSS (V) 100 rDS(on) (Ω) 0.030 at VGS = 10 V 0.034 at VGS = 6 V ID (A) 40

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