40N10 Datasheet | Specifications & PDF Download

40N10(F,B,H) 40A mps,100 Volts N-CHANNEL MOSFET FEATURE  40A,100V,RDS(ON)=40mΩ@VGS=10V/20A  Low gate charge  Low Ciss  Fast switching  100% av

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB40N10E/D Advance Data Sheet TMOS E-FET.™ Power Field Effect Transistor N–Channel E

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() CRST040N10N, CRSS037N10N SkyMOS1 N-MOSFET 100V, 3.3mΩ, 120A Features • Uses CRM(CQ) advanced SkyMOS1 technology • Extremely low on-resistance RDS

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Preliminary Data Sheet NP40N10YDF, NP40N10VDF, NP40N10PDF 100 V – 40 A – N-channel Power MOS FET Application: Automotive R07DS0361EJ0201 Rev.2.01 M

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DATA SHEET www.onsemi.com MOSFET – Power, Single N-Channel 100 V, 38 mW, 21 A NVMFS040N10MCL V(BR)DSS 100 V RDS(ON) MAX 38 mW @ 10 V 53 mW @ 4.5 V

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PolarHVTM HiPerFET IXFH 140N10P Power MOSFETs IXFT 140N10P N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated V DSS ID25 RDS(on) trr

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor 40N10 ·FEATURES ·Drain Current ID= 40A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Stat

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RFG40N10, RFP40N10, RF1S40N10, RF1S40N10SM Data Sheet January 2002 40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs These are N-Channel power MOSFETs ma

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MOTOROLA w m o Advance Data Sheet.c U TMOS E-FET t4 . ™ eEffect Transistor Power Field e N–Channel h Enhancement–Mode Silicon Gate S a t a D . w w T

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Preliminary Data Sheet NP40N10YDF, NP40N10VDF, NP40N10PDF 100 V – 40 A – N-channel Power MOS FET Application: Automotive R07DS0361EJ0201 Rev.2.01 M

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() Features • Uses CRM(CQ) advanced SkyMOS2 technology • Extremely low on-resistance RDS(on) • Excellent QgxRDS(on) product(FOM) • Qualified according

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Preliminary Data Sheet NP40N10YDF, NP40N10VDF, NP40N10PDF 100 V – 40 A – N-channel Power MOS FET Application: Automotive R07DS0361EJ0201 Rev.2.01 M

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40N10-VB TO252 40N10-VB TO252 Datasheet N-Channel 100-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 100 0.030 at VGS =

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N-Channel Enhancement Mode Power MOSFET MXB040N10 DESCRIPTION The MXB040N10 uses advanced trench technology to provide excellent RDS(ON), low gate cha

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CEP140N10/CEB140N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 137A, RDS(ON) = 7.5mΩ @VGS = 10V. Super high dense cell design

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BSC040N10NS5SC MOSFET OptiMOSTM 5 Power-Transistor, 100 V Features • Dual-side cooled package with lowest Junction-top thermal resistance • 175°C rat

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40N10(F,B,H) 40A mps,100 Volts N-CHANNEL MOSFET FEATURE  40A,100V,RDS(ON)=40mΩ@VGS=10V/20A  Low gate charge  Low Ciss  Fast switching  100% av

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40N10(F,B,H) 40A mps,100 Volts N-CHANNEL MOSFET FEATURE  40A,100V,RDS(ON)=40mΩ@VGS=10V/20A  Low gate charge  Low Ciss  Fast switching  100% av

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N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 37A, RDS(ON) = 32mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(O

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