40N15 Datasheet | Specifications & PDF Download

UNISONIC TECHNOLOGIES CO., LTD 40N15-HC 40A, 150V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 40N15-HC is a N-channel enhancement MOSFET using UTC’s

(27 views)

Features  N-Channel  Enhancement mode  Very low on-resistance @ VGS=4.5 V  Fast Switching  100% Avalanche test  Pb-free lead plating; RoHS compl

(24 views)

Advance Technical Information www.DataSheet4U.com GigaMOSTM TrenchT2 HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrins

(22 views)

Advance Technical Information www.DataSheet4U.com GigaMOSTM TrenchT2 HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrins

(20 views)

SGL40N150 SGL40N150 IGBT General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. The

(20 views)

1500V MOS Gated Thyristor MMJX1H40N150 A VDM = 1500V A (Electrically Isolated Tab) G K G Ks Ks K Symbol VDM VGK VGK ITSM PD TJ TJM Tstg TL TSOLD

(20 views)

isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 40A@ TC=25℃ ·Drain Source Voltage- : VDSS= 150V(Min) ·Static Drain-Source On-Resistance

(19 views)

Advance Technical Information www.DataSheet4U.com GigaMOSTM TrenchT2 HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrins

(19 views)

FGL40N150D IGBT FGL40N150D General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. The

(19 views)

X4-Class Power MOSFETTM Advance Technical Information IXTT240N15X4HV IXTH240N15X4 VDSS = ID25 = RDS(on) 150V 240A 4.4m N-Channel Enhancement Mo

(18 views)

X4-Class Power MOSFETTM Advance Technical Information IXTT240N15X4HV IXTH240N15X4 VDSS = ID25 = RDS(on) 150V 240A 4.4m N-Channel Enhancement Mo

(16 views)

Preliminary Technical Information 1500V MOS Gated Thyristor IXHH40N150HV VDM A = 1500V G K TO-247HV Symbol VDM VGK VGK ITSM PD TJ TJM Tstg TL

(16 views)

Preliminary Technical Information 1500V MOS Gated IXHX40N150V1HV VDM Thyristor A w/ Anti-Parallel Diode = 1500V G K Symbol VDM VGK VGK ITSM PD TJ T

(16 views)

FGL40N150D IGBT FGL40N150D General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. The

(15 views)

Features  N-Channel  Enhancement mode  Very low on-resistance @ VGS=4.5 V  Fast Switching  100% Avalanche test  Pb-free lead plating; RoHS compl

(12 views)

SGL40N150D SGL40N150D IGBT General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. T

(12 views)

FGL40N150D IGBT FGL40N150D General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. The

(11 views)

AP140N15NF 150V N-Channel Enhancement Mode MOSFET Description The AP140N15NF uses advanced APM-SGTⅠtechnology to provide excellent RDS(ON), low gate c

(10 views)

+01.$ N-Channel Enhancement Mode Power MOSFET Description The +01.$ uses advanced trench technology and design to provide excellent RDS(ON) w

(8 views)

SUM40N15-38 Vishay Siliconix N-Channel 150-V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 150 0.038 at VGS = 10 V 0.042 at VGS = 6 V I

(6 views)