40N15 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 40A@ TC=25℃ ·Drain Source Voltage- : VDSS= 150V(Min) ·Static Drain-Source On-Resistance

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FGL40N150D IGBT FGL40N150D General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. The

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Features  N-Channel  Enhancement mode  Very low on-resistance @ VGS=4.5 V  Fast Switching  100% Avalanche test  Pb-free lead plating; RoHS compl

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SGL40N150 SGL40N150 IGBT General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. The

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UNISONIC TECHNOLOGIES CO., LTD 40N15-HC 40A, 150V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 40N15-HC is a N-channel enhancement MOSFET using UTC’s

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Advance Technical Information www.DataSheet4U.com GigaMOSTM TrenchT2 HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrins

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Advance Technical Information www.DataSheet4U.com GigaMOSTM TrenchT2 HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrins

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1500V MOS Gated Thyristor MMJX1H40N150 A VDM = 1500V A (Electrically Isolated Tab) G K G Ks Ks K Symbol VDM VGK VGK ITSM PD TJ TJM Tstg TL TSOLD

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Advance Technical Information www.DataSheet4U.com GigaMOSTM TrenchT2 HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrins

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Preliminary Technical Information 1500V MOS Gated Thyristor IXHH40N150HV VDM A = 1500V G K TO-247HV Symbol VDM VGK VGK ITSM PD TJ TJM Tstg TL

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X4-Class Power MOSFETTM Advance Technical Information IXTT240N15X4HV IXTH240N15X4 VDSS = ID25 = RDS(on) 150V 240A 4.4m N-Channel Enhancement Mo

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+01.$ N-Channel Enhancement Mode Power MOSFET Description The +01.$ uses advanced trench technology and design to provide excellent RDS(ON) w

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FGL40N150D IGBT FGL40N150D General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. The

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Features  N-Channel  Enhancement mode  Very low on-resistance @ VGS=4.5 V  Fast Switching  100% Avalanche test  Pb-free lead plating; RoHS compl

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X4-Class Power MOSFETTM Advance Technical Information IXTT240N15X4HV IXTH240N15X4 VDSS = ID25 = RDS(on) 150V 240A 4.4m N-Channel Enhancement Mo

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Preliminary Technical Information 1500V MOS Gated IXHX40N150V1HV VDM Thyristor A w/ Anti-Parallel Diode = 1500V G K Symbol VDM VGK VGK ITSM PD TJ T

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FGL40N150D IGBT FGL40N150D General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. The

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SGL40N150D SGL40N150D IGBT General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. T

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AP140N15NF 150V N-Channel Enhancement Mode MOSFET Description The AP140N15NF uses advanced APM-SGTⅠtechnology to provide excellent RDS(ON), low gate c

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UNISONIC TECHNOLOGIES CO., LTD 40N15 Preliminary Power MOSFET 40A, 150V N-CHANNEL POWER MOSFET „ DESCRIPTION 1 The UTC 40N15 is an N-channel enhance

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