45.0V Datasheet | Specifications & PDF Download

FGD4536 — 360 V PDP Trench IGBT FGD4536 360 V PDP Trench IGBT Features • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.59 V @ IC = 5

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SGA45T60SMD 45A 600V Field Stop Trench IGBT SGA45T60SMD 45A 600V Field Stop Trench IGBT Features • Field Stop Trench Technology • Typical VCE(sat) =

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FGPF4536 — 360 V PDP Trench IGBT FGPF4536 360 V PDP Trench IGBT Features • High Current Capability • Low Saturation Voltage: VCE (sat) =1.59 V @ IC =

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FDS4559 April 2002 FDS4559 60V Complementary PowerTrenchMOSFET General Description This complementary MOSFET device is produced using Fairchild’s a

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FDS9945 February 2001 FDS9945 60V N-Channel PowerTrench® MOSFET General Description These N Channel Logic Level MOSFET have been designed specifical

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NTQtu5[PgPQlSł www.whxpcb.com AO4455 30V P-Channel MOSFET General Description The AO4455 uses advanced trench technology to provide excellent RDS(ON

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CMB50N06/CMP50N06 N-Channel 60V 45A Power MOSFET General Description Product Summery The 50N06 is extremely high-density N-channel MOSFET, which p

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IPD95R450P7 MOSFET 950V CoolMOSª P7 SJ Power Device The latest 950V CoolMOS™ P7 series sets a new benchmark in 950V super junction technologies and c

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Miniature Aluminum Electrolytic Capacitors HIGH RIPPLE CURRENT, RADIAL LEADS, POLARIZED, ALUMINUM ELECTROLYTIC FEATURES • LONG LIFE AT 105°C (5,000 hr

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Public IGT65R045D2 Final datasheet CoolGaN™ G5 CoolGaN™ Transistor 650 V G5 Infineon’s CoolGaN™ is a highly efficient gallium nitride (GaN) transisto

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AO4459 30V P-Channel MOSFET General Description Product Summary The AO4459 combines advanced trench MOSFET technology with a low resistance package

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L4945/L4950 L4951 5V/8.5V/10V VERY LOW DROP VOLTAGE REGULATORS PRECISE OUTPUT VOLTAGE: 5V ± 4% (L4945) 8.5V ± 4% (L4950) 10V ± 4% (L4951) OVER FULL TE

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AOD4454 150V N-Channel MOSFET General Description Product Summary The AOD4454 combines advanced trench MOSFET technology with a low resistance pack

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0.3A 100KHz 80V Buck DC to DC Converter Datasheet XL7045 Features „ Wide 10V to 80V Operation Voltage „ Output Adjustable from 1.25V to 20V „ Maximu

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AOD454A 40V N-Channel MOSFET General Description The AOD454A uses advanced trench technology and design to provide excellent RDS(ON) with low gate ch

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ACT4529 Rev 1, October 13th, 2015 40V/3.0A CV/CC Buck Converter Featuring QC2.0 ,USB Auto-Detect and USB-PD FEATURES  Qualcomm® Quick Charge™ 2.0 C

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IMZ120R045M1 IMZ120R045M1 CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features  Very low switching losses  Threshold-free on state cha

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General Description • Low RDS(ON) • RoHS and Halogen-Free Compliant Applications • Load switch • PWM AO3452 30V N-Channel MOSFET Product Summary VDS

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MDE Semiconductor, Inc. 78-150 Calle Tampico, Unit 210, La Quinta, CA. U.S.A. 92253 Tel: 760-564-8656 • Fax: 760-564-2414 ICTE5.0 to ICTE15C MPTE-5 t

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ST95P04 SERIAL ACCESS SPI BUS 4K (512 x 8) EEPROM NOT FOR NEW DESIGN 1 MILLION ERASE/WRITE CYCLES 40 YEARS DATA RETENTION SINGLE 3V to 5.5V SUPPLY VO

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