45.0V Datasheet | Specifications & PDF Download

SGA45T60SMD 45A 600V Field Stop Trench IGBT SGA45T60SMD 45A 600V Field Stop Trench IGBT Features • Field Stop Trench Technology • Typical VCE(sat) =

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Features • Uses CRM advanced Trench technology • Extremely low on-resistance RDS(on) • Excellent QgxRDS(on) product(FOM) • Qualified according to JEDE

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FGD4536 — 360 V PDP Trench IGBT FGD4536 360 V PDP Trench IGBT Features • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.59 V @ IC = 5

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FGPF4536 — 360 V PDP Trench IGBT FGPF4536 360 V PDP Trench IGBT Features • High Current Capability • Low Saturation Voltage: VCE (sat) =1.59 V @ IC =

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M3TEK IT7453 High Efficiency 30V Step-Up DC/DC Converter with 1.3A Integrated Switch Description The IT7453 is a high efficiency step-up DC/DC conv

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www.atcsemi.com AT1045K 100V N-Channel MOSFET Features Product Summary ● Advanced high cell density Trench technology ● Super Low Gate Charge ● Ex

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CMB50N06/CMP50N06 N-Channel 60V 45A Power MOSFET General Description Product Summery The 50N06 is extremely high-density N-channel MOSFET, which p

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NTQtu5[PgPQlSł www.whxpcb.com AO4455 30V P-Channel MOSFET General Description The AO4455 uses advanced trench technology to provide excellent RDS(ON

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IMZ120R045M1 IMZ120R045M1 CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features  Very low switching losses  Threshold-free on state cha

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GSD10V45S Ultra-Low VF Surface Mount Schottky Barrier Rectifiers Product Description Device optimized for ultra-low forward voltage drop to maximize

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FDS9945 February 2001 FDS9945 60V N-Channel PowerTrench® MOSFET General Description These N Channel Logic Level MOSFET have been designed specifical

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ZXTD4591E6 DUAL 60V NPN/PNP SILICON MEDIUM POWER TRANSISTORS SUMMARY NPN: VCEO=60V; IC= 1A; hFE=100-300 PNP: VCEO=-60V; IC= -1A; hFE=100-300 DESCRIPTI

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AOD4454 150V N-Channel MOSFET General Description Product Summary The AOD4454 combines advanced trench MOSFET technology with a low resistance pack

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430V N-Channel MOSFET General Features  Proprietary New Planar Technology  RDS(ON),typ.=0.39 Ω@VGS=10V  Low Gate Charge Minimize Switching Loss  F

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R1245x Series 1.2 A, 30 V Step-Down DC/DC Converter No. EA-269-201022 OUTLINE The R1245x is a CMOS-based Step-down DC/DC converter with internal N-

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HT45F0V/HT45F0VP TinyPowerTM A/D Flash Type 8-Bit MCU with EEPROM Technical Document · Tools Information · FAQs · Application Note - HA0075E MCU Reset

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HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Data Sheet December 2001 45A, 600V, UFS Series N-Channel IGBT This family of MOS gated high voltage switching

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MDE Semiconductor, Inc. 78-150 Calle Tampico, Unit 210, La Quinta, CA. U.S.A. 92253 Tel: 760-564-8656 • Fax: 760-564-2414 ICTE5.0 to ICTE15C MPTE-5 t

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Miniature Aluminum Electrolytic Capacitors REDUCED SIZE, RADIAL LEADS, POLARIZED, ALUMINUM ELECTROLYTIC FEATURES • HIGH RIPPLE CURRENT, VOLTAGE (UP TO

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