* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications
HGT1S20N60C3S Datasheet (144.01 KB)
HGT1S20N60C3S
Fairchild Semiconductor
144.01 KB
45a/ 600v/ ufs series n-channel igbt.
HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S
Data Sheet December 2001
45A, 600V, UFS Series N-Channel IGBT
This family of MOS gated high voltage switching.
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