HGT1S20N35G3VLS

N-Channel IGBT

Fairchild Semiconductor

HGT1S20N35G3VLS Features

* Logic Level Gate Drive

* Internal Voltage Clamp

* ESD Gate Protection

* TJ = 175oC

* Ignition Energy Capable Description This N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition ci

HGT1S20N35G3VLS Datasheet (209.49 KB)

HGT1S20N35G3VLS Datasheet Preview — Preview of HGT1S20N35G3VLS PDF

Datasheet Details

Part number:

HGT1S20N35G3VLS

Manufacturer:

Fairchild Semiconductor

File Size:

209.49 KB

Description:

N-channel igbt.
HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS December 2001 20A, 350V N-Channel, Logic Level, Voltage Clamping IGBTs Packages JEDEC TO-220AB EMITTER.

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HGT1S20N35G3VLS N-Channel IGBT Fairchild Semiconductor

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