* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching applicatio
HGT1S20N60A4S9A Datasheet (231.40 KB)
HGT1S20N60A4S9A
Fairchild Semiconductor
231.40 KB
Smps series n-channel igbts.
Data Sheet
HGT1S20N60A4S9A
March 2006
600V, SMPS Series N-Channel IGBTs
The HGT1S20N60A4S9A is MOS gated high voltage switching devices combining t.
📁 Related Datasheet
HGT1S20N60B3S - N-Channel IGBT
(Fairchild Semiconductor)
HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3
Data Sheet January 2000 File Number 3723.6
40A, 600V, UFS Series N-Channel IGBTs
The HGT1S20N60B3S, the HGTP2.
HGT1S20N60B3S - N-Channel IGBT
(Intersil Corporation)
HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3
Data Sheet January 2000 File Number 3723.6
40A, 600V, UFS Series N-Channel IGBTs
The HGT1S20N60B3S, the HGTP2.
HGT1S20N60C3R - N-Channel IGBTs
(HARRIS)
HGTG20N60C3R, HGTP20N60C3R, S E M I C O N D U C T O R HGT1S20N60C3R, HGT1S20N60C3RS
January 1997
40A, 600V, Rugged UFS Series N-Channel IGBTs
Featu.
HGT1S20N60C3RS - N-Channel IGBTs
(Intersil)
POSSOIBBLSEOHSLGUETBTGTSEM2TP0ITNRU6OT0DECDU3PaCtRTaOSDhUeCeTt
HGTG20N60C3R, HGTP20N60C3R, HGT1S20N60C3RS
June 2000 File Number 4226.2
[ /Title (HGT.
HGT1S20N60C3RS - N-Channel IGBTs
(HARRIS)
HGTG20N60C3R, HGTP20N60C3R, S E M I C O N D U C T O R HGT1S20N60C3R, HGT1S20N60C3RS
January 1997
40A, 600V, Rugged UFS Series N-Channel IGBTs
Featu.
HGT1S20N60C3S - 45A/ 600V/ UFS Series N-Channel IGBT
(Fairchild Semiconductor)
HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S
Data Sheet December 2001
45A, 600V, UFS Series N-Channel IGBT
This family of MOS gated high voltage switching.
HGT1S20N60C3S - N-Channel IGBT
(Intersil Corporation)
Data Sheet
HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S
December 2001
45A, 600V, UFS Series N-Channel IGBT
This family of MOS gated high voltage switchin.
HGT1S20N35G3VL - N-Channel IGBT
(Fairchild Semiconductor)
HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS
December 2001
20A, 350V N-Channel, Logic Level, Voltage Clamping IGBTs
Packages
JEDEC TO-220AB
EMITTER.
