* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching applicatio
HGT1S20N60A4S9A Datasheet (231.40 KB)
HGT1S20N60A4S9A
Fairchild Semiconductor
231.40 KB
Smps series n-channel igbts.
Data Sheet HGT1S20N60A4S9A March 2006 600V, SMPS Series N-Channel IGBTs The HGT1S20N60A4S9A is MOS gated high voltage switching devices combining t.
📁 Related Datasheet
HGT1S20N60B3S N-Channel IGBT (Fairchild Semiconductor)
HGT1S20N60B3S N-Channel IGBT (Intersil Corporation)
HGT1S20N60C3R N-Channel IGBTs (HARRIS)
HGT1S20N60C3RS N-Channel IGBTs (Intersil)
HGT1S20N60C3RS N-Channel IGBTs (HARRIS)
HGT1S20N60C3S 45A/ 600V/ UFS Series N-Channel IGBT (Fairchild Semiconductor)
HGT1S20N60C3S N-Channel IGBT (Intersil Corporation)
HGT1S20N35G3VL N-Channel IGBT (Fairchild Semiconductor)
HGT1S20N35G3VL N-Channel IGBT (Intersil Corporation)
HGT1S20N35G3VLS N-Channel IGBT (Fairchild Semiconductor)
