Part number:
HGT1S20N60B3S
Manufacturer:
Fairchild Semiconductor
File Size:
138.79 KB
Description:
N-channel igbt.
HGT1S20N60B3S_FairchildSemiconductor.pdf
Datasheet Details
HGT1S20N60B3S Features
* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications
HGT1S20N60B3S_FairchildSemiconductor.pdf
Datasheet Details
HGT1S20N60B3S
Fairchild Semiconductor
138.79 KB
N-channel igbt.
HGT1S20N60B3S Distributor
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