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HGT1S20N60B3S Datasheet - Fairchild Semiconductor

HGT1S20N60B3S_FairchildSemiconductor.pdf

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Datasheet Details

Part number:

HGT1S20N60B3S

Manufacturer:

Fairchild Semiconductor

File Size:

138.79 KB

Description:

N-channel igbt.

HGT1S20N60B3S, N-Channel IGBT

HGT1S20N60B3S Features

* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications

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